Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1–14- <formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Infrared Wavelength Range
We present relationships for the free-carrier-induced electrorefraction and electroabsorption in crystalline silicon over the 1-14-μm wavelength range. Electroabsorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these...
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/6051462/ |
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doaj-273a4816f7434e2ba39ad23e938774452021-03-29T17:03:01ZengIEEEIEEE Photonics Journal1943-06552011-01-01361171118010.1109/JPHOT.2011.21719306051462Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1–14- <formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Infrared Wavelength RangeMilos Nedeljkovic0Richard Soref1Goran Z. Mashanovich2<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula> Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, U.K.<formula formulatype="inline"><tex Notation="TeX">$^{2}$</tex></formula>Physics and Engineering Departments , University of Massachusetts at Boston, Boston, MA, USA<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula> Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, U.K.We present relationships for the free-carrier-induced electrorefraction and electroabsorption in crystalline silicon over the 1-14-μm wavelength range. Electroabsorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these spectra is used to predict electrorefraction modulation. More recent experimental results for terahertz absorption of silicon are also used to improve the commonly used 1.3- and 1.55-μm equations. We examine the wavelength dependence of electrorefraction and electroabsorption, finding that the predictions suggest longer wave modulator designs will, in many cases, be different from those used in the telecom range.https://ieeexplore.ieee.org/document/6051462/Absorptionelectrooptic modulatorssemiconductor impuritiessilicon |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Milos Nedeljkovic Richard Soref Goran Z. Mashanovich |
| spellingShingle |
Milos Nedeljkovic Richard Soref Goran Z. Mashanovich Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1–14- <formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Infrared Wavelength Range IEEE Photonics Journal Absorption electrooptic modulators semiconductor impurities silicon |
| author_facet |
Milos Nedeljkovic Richard Soref Goran Z. Mashanovich |
| author_sort |
Milos Nedeljkovic |
| title |
Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1–14- <formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Infrared Wavelength Range |
| title_short |
Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1–14- <formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Infrared Wavelength Range |
| title_full |
Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1–14- <formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Infrared Wavelength Range |
| title_fullStr |
Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1–14- <formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Infrared Wavelength Range |
| title_full_unstemmed |
Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1–14- <formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Infrared Wavelength Range |
| title_sort |
free-carrier electrorefraction and electroabsorption modulation predictions for silicon over the 1–14- <formula formulatype="inline"><tex notation="tex">$\mu\hbox{m}$</tex></formula> infrared wavelength range |
| publisher |
IEEE |
| series |
IEEE Photonics Journal |
| issn |
1943-0655 |
| publishDate |
2011-01-01 |
| description |
We present relationships for the free-carrier-induced electrorefraction and electroabsorption in crystalline silicon over the 1-14-μm wavelength range. Electroabsorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these spectra is used to predict electrorefraction modulation. More recent experimental results for terahertz absorption of silicon are also used to improve the commonly used 1.3- and 1.55-μm equations. We examine the wavelength dependence of electrorefraction and electroabsorption, finding that the predictions suggest longer wave modulator designs will, in many cases, be different from those used in the telecom range. |
| topic |
Absorption electrooptic modulators semiconductor impurities silicon |
| url |
https://ieeexplore.ieee.org/document/6051462/ |
| work_keys_str_mv |
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