Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs) with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectri...

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Bibliographic Details
Main Authors:	Jiongjiong Mo, Xuran Zhao, Min Zhou
Format:	Article
Language:	English
Published:	Hindawi Limited 2017-01-01
Series:	Active and Passive Electronic Components
Online Access:	http://dx.doi.org/10.1155/2017/9685685

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