Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs) with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectri...

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Main Authors: Jiongjiong Mo, Xuran Zhao, Min Zhou
Format: Article
Language:English
Published: Hindawi Limited 2017-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/2017/9685685
id doaj-26b773a8feee4e0eb479da2ce205d507
record_format Article
spelling doaj-26b773a8feee4e0eb479da2ce205d5072020-11-24T22:01:09ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50312017-01-01201710.1155/2017/96856859685685Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate DielectricsJiongjiong Mo0Xuran Zhao1Min Zhou2School of Aeronautics and Astronautics, Zhejiang University, Hangzhou, ChinaSchool of Computer and Information Engineering, Zhejiang Gongshang University, Hangzhou, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou, ChinaThe total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs) with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.http://dx.doi.org/10.1155/2017/9685685
collection DOAJ
language English
format Article
sources DOAJ
author Jiongjiong Mo
Xuran Zhao
Min Zhou
spellingShingle Jiongjiong Mo
Xuran Zhao
Min Zhou
Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics
Active and Passive Electronic Components
author_facet Jiongjiong Mo
Xuran Zhao
Min Zhou
author_sort Jiongjiong Mo
title Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics
title_short Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics
title_full Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics
title_fullStr Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics
title_full_unstemmed Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics
title_sort total ionizing dose effects of si vertical diffused mosfet with sio2 and si3n4/sio2 gate dielectrics
publisher Hindawi Limited
series Active and Passive Electronic Components
issn 0882-7516
1563-5031
publishDate 2017-01-01
description The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs) with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.
url http://dx.doi.org/10.1155/2017/9685685
work_keys_str_mv AT jiongjiongmo totalionizingdoseeffectsofsiverticaldiffusedmosfetwithsio2andsi3n4sio2gatedielectrics
AT xuranzhao totalionizingdoseeffectsofsiverticaldiffusedmosfetwithsio2andsi3n4sio2gatedielectrics
AT minzhou totalionizingdoseeffectsofsiverticaldiffusedmosfetwithsio2andsi3n4sio2gatedielectrics
_version_ 1725841333219753984

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