Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method
Empirical models have been widely and successfully used in device modeling in the past few decades. However, they are becoming increasingly intricate to accurately capture the complex thermal effects in semiconductor devices. Therefore, the aim of this work is to utilize a general dimension-reductio...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8886403/ |