Thermal effects on the Raman phonon of few-layer phosphorene
Two-dimensional phosphorene is a promising channel material for next generation transistor applications due to its superior carrier transport property. Here, we report the influence of thermal effects on the Raman phonon of few-layer phosphorene formed on hafnium-dioxide (HfO2) high-k dielectric. Wh...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4937468 |