Voltage-Controlled Small Signal Analysis of Real Space Transfer Transistor

The research of determining the small signal equivalent circuit of the real space transfer (RST) transistor is investigated in this work. We propose a voltage-controlled mode model, called parameter extraction, to describe the performance of RST transistors at high frequency range. Besides, we also...

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Main Authors: K. F. Yarn, J. Y. Hwang
Format: Article
Language:English
Published: Hindawi Limited 2003-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/APEC.26.51
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spelling doaj-25a1ef1da6d64570a16d9fa8cfb465442020-11-24T23:19:42ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50312003-01-01261516210.1155/APEC.26.51Voltage-Controlled Small Signal Analysis of Real Space Transfer TransistorK. F. Yarn0J. Y. Hwang1Department of Electrical Engineering, Far East College, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, ChinaDepartment of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan 701, ChinaThe research of determining the small signal equivalent circuit of the real space transfer (RST) transistor is investigated in this work. We propose a voltage-controlled mode model, called parameter extraction, to describe the performance of RST transistors at high frequency range. Besides, we also employ the value-determined model to simulate the microwave characteristics of RST and the theoretical and experimental results are compared. The influence of variables of RF performance is analyzed and theoretical results show that the cut-off frequency (fT) is mainly affected by the leakage resistances and the dimension of metal contact, but the maximum available gain frequencyfmax, is dependent on contact resistances.http://dx.doi.org/10.1155/APEC.26.51
collection DOAJ
language English
format Article
sources DOAJ
author K. F. Yarn
J. Y. Hwang
spellingShingle K. F. Yarn
J. Y. Hwang
Voltage-Controlled Small Signal Analysis of Real Space Transfer Transistor
Active and Passive Electronic Components
author_facet K. F. Yarn
J. Y. Hwang
author_sort K. F. Yarn
title Voltage-Controlled Small Signal Analysis of Real Space Transfer Transistor
title_short Voltage-Controlled Small Signal Analysis of Real Space Transfer Transistor
title_full Voltage-Controlled Small Signal Analysis of Real Space Transfer Transistor
title_fullStr Voltage-Controlled Small Signal Analysis of Real Space Transfer Transistor
title_full_unstemmed Voltage-Controlled Small Signal Analysis of Real Space Transfer Transistor
title_sort voltage-controlled small signal analysis of real space transfer transistor
publisher Hindawi Limited
series Active and Passive Electronic Components
issn 0882-7516
1563-5031
publishDate 2003-01-01
description The research of determining the small signal equivalent circuit of the real space transfer (RST) transistor is investigated in this work. We propose a voltage-controlled mode model, called parameter extraction, to describe the performance of RST transistors at high frequency range. Besides, we also employ the value-determined model to simulate the microwave characteristics of RST and the theoretical and experimental results are compared. The influence of variables of RF performance is analyzed and theoretical results show that the cut-off frequency (fT) is mainly affected by the leakage resistances and the dimension of metal contact, but the maximum available gain frequencyfmax, is dependent on contact resistances.
url http://dx.doi.org/10.1155/APEC.26.51
work_keys_str_mv AT kfyarn voltagecontrolledsmallsignalanalysisofrealspacetransfertransistor
AT jyhwang voltagecontrolledsmallsignalanalysisofrealspacetransfertransistor
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