Van der Waals negative capacitance transistors
The adaptation to atomically thin 2D semiconductors and van der Waals layered ferroelectrics can enable negative capacitance transistors with superior performance and bendability. Here, the authors report flexible negative capacitance transistors based on MoS2 and a ferroelectric dielectric CIPS wit...
Main Authors: | Xiaowei Wang, Peng Yu, Zhendong Lei, Chao Zhu, Xun Cao, Fucai Liu, Lu You, Qingsheng Zeng, Ya Deng, Jiadong Zhou, Qundong Fu, Junling Wang, Yizhong Huang, Zheng Liu |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2019-07-01
|
Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-019-10738-4 |
Similar Items
-
Van der Waals engineering of ferroelectric heterostructures for long-retention memory
by: Xiaowei Wang, et al.
Published: (2021-02-01) -
Author Correction: Van der Waals engineering of ferroelectric heterostructures for long-retention memory
by: Xiaowei Wang, et al.
Published: (2021-05-01) -
Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
by: Jing Li, et al.
Published: (2019-05-01) -
Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors
by: Weixing Huang, et al.
Published: (2020-01-01) -
The Fabrication of Molybdenum Disulfide Negative Capacitance Field Effect Transistors
by: Su, Jhih-Fong, et al.
Published: (2018)