Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon

Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon

The most common fabrication technique of porous silicon (PS) is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF) acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and avera...

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Main Authors: Pushpendra Kumar, Patrick Huber
Format: Article
Language:English
Published: Hindawi Limited 2007-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2007/89718
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spelling doaj-25749e4f77ee4cc49ca9d3c13e290f2a2020-11-25T00:15:34ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292007-01-01200710.1155/2007/8971889718Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous SiliconPushpendra Kumar0Patrick Huber1Faculty of Physics and Mechatronic Engineering, Saarland University, Saarbrücken 66041, GermanyFaculty of Physics and Mechatronic Engineering, Saarland University, Saarbrücken 66041, GermanyThe most common fabrication technique of porous silicon (PS) is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF) acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The control of these properties of PS was shown to depend on the HF concentration in the used electrolyte, the applied current density, and the thickness of PS. The change in pore diameter, porosity, and specific surface area of PS was investigated by measuring nitrogen sorption isotherms.http://dx.doi.org/10.1155/2007/89718
collection DOAJ
language English
format Article
sources DOAJ
author Pushpendra Kumar
Patrick Huber
spellingShingle Pushpendra Kumar
Patrick Huber
Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon
Journal of Nanomaterials
author_facet Pushpendra Kumar
Patrick Huber
author_sort Pushpendra Kumar
title Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon
title_short Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon
title_full Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon
title_fullStr Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon
title_full_unstemmed Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon
title_sort effect of etching parameter on pore size and porosity of electrochemically formed nanoporous silicon
publisher Hindawi Limited
series Journal of Nanomaterials
issn 1687-4110
1687-4129
publishDate 2007-01-01
description The most common fabrication technique of porous silicon (PS) is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF) acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The control of these properties of PS was shown to depend on the HF concentration in the used electrolyte, the applied current density, and the thickness of PS. The change in pore diameter, porosity, and specific surface area of PS was investigated by measuring nitrogen sorption isotherms.
url http://dx.doi.org/10.1155/2007/89718
work_keys_str_mv AT pushpendrakumar effectofetchingparameteronporesizeandporosityofelectrochemicallyformednanoporoussilicon
AT patrickhuber effectofetchingparameteronporesizeandporosityofelectrochemicallyformednanoporoussilicon
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