Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides

Atomic defects impact the electronic properties of atomically thin transition metal dichalcogenides (TMDs). Here, the authors locate the mid-gap states originating from single chalcogen-atom vacancies in four representative semiconducting monolayer films, and analyse their implications for the semic...

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Main Authors: Tae Young Jeong, Hakseong Kim, Sang-Jun Choi, Kenji Watanabe, Takashi Taniguchi, Ki Ju Yee, Yong-Sung Kim, Suyong Jung
Format: Article
Language:English
Published: Nature Publishing Group 2019-08-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-019-11751-3
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spelling doaj-25555605c5a64a088d898838a920ba5a2021-05-11T11:47:06ZengNature Publishing GroupNature Communications2041-17232019-08-0110111010.1038/s41467-019-11751-3Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenidesTae Young Jeong0Hakseong Kim1Sang-Jun Choi2Kenji Watanabe3Takashi Taniguchi4Ki Ju Yee5Yong-Sung Kim6Suyong Jung7Quantum Technology Institute, Korea Research Institute of Standards and ScienceQuantum Technology Institute, Korea Research Institute of Standards and ScienceCenter for Theoretical Physics of Complex Systems, Institute for Basic ScienceAdvanced Materials Laboratory, National Institute for Materials ScienceAdvanced Materials Laboratory, National Institute for Materials ScienceDepartment of Physics, Chungnam National UniversityQuantum Technology Institute, Korea Research Institute of Standards and ScienceQuantum Technology Institute, Korea Research Institute of Standards and ScienceAtomic defects impact the electronic properties of atomically thin transition metal dichalcogenides (TMDs). Here, the authors locate the mid-gap states originating from single chalcogen-atom vacancies in four representative semiconducting monolayer films, and analyse their implications for the semiconducting properties of atomically thin TMDs through electron tunneling and optical spectroscopy measurements.https://doi.org/10.1038/s41467-019-11751-3
collection DOAJ
language English
format Article
sources DOAJ
author Tae Young Jeong
Hakseong Kim
Sang-Jun Choi
Kenji Watanabe
Takashi Taniguchi
Ki Ju Yee
Yong-Sung Kim
Suyong Jung
spellingShingle Tae Young Jeong
Hakseong Kim
Sang-Jun Choi
Kenji Watanabe
Takashi Taniguchi
Ki Ju Yee
Yong-Sung Kim
Suyong Jung
Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
Nature Communications
author_facet Tae Young Jeong
Hakseong Kim
Sang-Jun Choi
Kenji Watanabe
Takashi Taniguchi
Ki Ju Yee
Yong-Sung Kim
Suyong Jung
author_sort Tae Young Jeong
title Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
title_short Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
title_full Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
title_fullStr Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
title_full_unstemmed Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
title_sort spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
publisher Nature Publishing Group
series Nature Communications
issn 2041-1723
publishDate 2019-08-01
description Atomic defects impact the electronic properties of atomically thin transition metal dichalcogenides (TMDs). Here, the authors locate the mid-gap states originating from single chalcogen-atom vacancies in four representative semiconducting monolayer films, and analyse their implications for the semiconducting properties of atomically thin TMDs through electron tunneling and optical spectroscopy measurements.
url https://doi.org/10.1038/s41467-019-11751-3
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