Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
Atomic defects impact the electronic properties of atomically thin transition metal dichalcogenides (TMDs). Here, the authors locate the mid-gap states originating from single chalcogen-atom vacancies in four representative semiconducting monolayer films, and analyse their implications for the semic...
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2019-08-01
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Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-019-11751-3 |
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doaj-25555605c5a64a088d898838a920ba5a2021-05-11T11:47:06ZengNature Publishing GroupNature Communications2041-17232019-08-0110111010.1038/s41467-019-11751-3Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenidesTae Young Jeong0Hakseong Kim1Sang-Jun Choi2Kenji Watanabe3Takashi Taniguchi4Ki Ju Yee5Yong-Sung Kim6Suyong Jung7Quantum Technology Institute, Korea Research Institute of Standards and ScienceQuantum Technology Institute, Korea Research Institute of Standards and ScienceCenter for Theoretical Physics of Complex Systems, Institute for Basic ScienceAdvanced Materials Laboratory, National Institute for Materials ScienceAdvanced Materials Laboratory, National Institute for Materials ScienceDepartment of Physics, Chungnam National UniversityQuantum Technology Institute, Korea Research Institute of Standards and ScienceQuantum Technology Institute, Korea Research Institute of Standards and ScienceAtomic defects impact the electronic properties of atomically thin transition metal dichalcogenides (TMDs). Here, the authors locate the mid-gap states originating from single chalcogen-atom vacancies in four representative semiconducting monolayer films, and analyse their implications for the semiconducting properties of atomically thin TMDs through electron tunneling and optical spectroscopy measurements.https://doi.org/10.1038/s41467-019-11751-3 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Tae Young Jeong Hakseong Kim Sang-Jun Choi Kenji Watanabe Takashi Taniguchi Ki Ju Yee Yong-Sung Kim Suyong Jung |
spellingShingle |
Tae Young Jeong Hakseong Kim Sang-Jun Choi Kenji Watanabe Takashi Taniguchi Ki Ju Yee Yong-Sung Kim Suyong Jung Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides Nature Communications |
author_facet |
Tae Young Jeong Hakseong Kim Sang-Jun Choi Kenji Watanabe Takashi Taniguchi Ki Ju Yee Yong-Sung Kim Suyong Jung |
author_sort |
Tae Young Jeong |
title |
Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides |
title_short |
Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides |
title_full |
Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides |
title_fullStr |
Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides |
title_full_unstemmed |
Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides |
title_sort |
spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides |
publisher |
Nature Publishing Group |
series |
Nature Communications |
issn |
2041-1723 |
publishDate |
2019-08-01 |
description |
Atomic defects impact the electronic properties of atomically thin transition metal dichalcogenides (TMDs). Here, the authors locate the mid-gap states originating from single chalcogen-atom vacancies in four representative semiconducting monolayer films, and analyse their implications for the semiconducting properties of atomically thin TMDs through electron tunneling and optical spectroscopy measurements. |
url |
https://doi.org/10.1038/s41467-019-11751-3 |
work_keys_str_mv |
AT taeyoungjeong spectroscopicstudiesofatomicdefectsandbandgaprenormalizationinsemiconductingmonolayertransitionmetaldichalcogenides AT hakseongkim spectroscopicstudiesofatomicdefectsandbandgaprenormalizationinsemiconductingmonolayertransitionmetaldichalcogenides AT sangjunchoi spectroscopicstudiesofatomicdefectsandbandgaprenormalizationinsemiconductingmonolayertransitionmetaldichalcogenides AT kenjiwatanabe spectroscopicstudiesofatomicdefectsandbandgaprenormalizationinsemiconductingmonolayertransitionmetaldichalcogenides AT takashitaniguchi spectroscopicstudiesofatomicdefectsandbandgaprenormalizationinsemiconductingmonolayertransitionmetaldichalcogenides AT kijuyee spectroscopicstudiesofatomicdefectsandbandgaprenormalizationinsemiconductingmonolayertransitionmetaldichalcogenides AT yongsungkim spectroscopicstudiesofatomicdefectsandbandgaprenormalizationinsemiconductingmonolayertransitionmetaldichalcogenides AT suyongjung spectroscopicstudiesofatomicdefectsandbandgaprenormalizationinsemiconductingmonolayertransitionmetaldichalcogenides |
_version_ |
1721445926801768448 |