InAs/GaSb Superlattice Based Mid-Infrared Interband Cascade Photodetectors Grown on Both Native GaSb and Lattice-Mismatched GaAs Substrates

InAs/GaSb Superlattice Based Mid-Infrared Interband Cascade Photodetectors Grown on Both Native GaSb and Lattice-Mismatched GaAs Substrates

Electrical and optical properties of interband cascade infrared photodetectors with InAs/GaSb type-II superlattice absorbers are investigated in this work. We compare the detection parameters of detectors grown on the native GaSb substrate and lattice-mismatched GaAs substrate and seek solutions to...

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Bibliographic Details
Main Authors: Klaudia Hackiewicz, Małgorzata Kopytko, Jarosław Rutkowski, Piotr Martyniuk, Łukasz Ciura
Format: Article
Language:English
Published: MDPI AG 2019-10-01
Series:Proceedings
Subjects:
infrared detectors
type-ii inas/gasb superlattice photodetectors
interband cascade photodetectors
icip
gasb substrate
gaas substrate
Online Access:https://www.mdpi.com/2504-3900/27/1/38
Description
Summary:Electrical and optical properties of interband cascade infrared photodetectors with InAs/GaSb type-II superlattice absorbers are investigated in this work. We compare the detection parameters of detectors grown on the native GaSb substrate and lattice-mismatched GaAs substrate and seek solutions to enhance device performance, specifically with using an optical immersion. The detectors grown on GaAs have better detection parameters at room temperature, but at lower temperatures the misfit dislocations become more important and detectors grown on GaSb become better.
ISSN:2504-3900

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