Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines

Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (<inline-formula><...

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Bibliographic Details
Main Authors: Fadis F. Murzakhanov, Boris V. Yavkin, Georgiy V. Mamin, Sergei B. Orlinskii, Ivan E. Mumdzhi, Irina N. Gracheva, Bulat F. Gabbasov, Alexander N. Smirnov, Valery Yu. Davydov, Victor A. Soltamov
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Nanomaterials
Subjects:
van der Waals materials
hBN
boron vacancies
optical spin polarization
electron spin resonance
crystalline quality control
Online Access:https://www.mdpi.com/2079-4991/11/6/1373

Internet

https://www.mdpi.com/2079-4991/11/6/1373

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