Ohmic Contacts With Ultra-Low Optical Loss on Heavily Doped n-Type InGaAs and InGaAsP for InP-Based Photonic Membranes

Ohmic Contacts With Ultra-Low Optical Loss on Heavily Doped n-Type InGaAs and InGaAsP for InP-Based Photonic Membranes

In this paper, we present significant reductions of optical losses and contact resistances in AgGe-based ohmic contacts to InP membranes. Due to the high solubility of Si in InGaAs and InGaAsP, heavily doped n-type contact layers are grown on InP wafers. This high doping concentration gives rise to...

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Bibliographic Details
Main Authors: L. Shen, P. J. van Veldhoven, Y. Jiao, V. Dolores-Calzadilla, J. J. G. M. van der Tol, G. Roelkens, M. K. Smit
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Photonics Journal
Subjects:
Waveguide devices
semiconductor materials
optical and other properties
membrane photonics
Online Access:https://ieeexplore.ieee.org/document/7397876/

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