Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures

Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures

A detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological process is performed. To this purpose their main parameters have been evaluated. A three-dimensional physical model was employed in order to evaluate the structures. On this occasion, numerical information...

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Main Author: Maria-Alexandra Paun
Format: Article
Language:English
Published: Hindawi Limited 2016-01-01
Series:Advances in Materials Science and Engineering
Online Access:http://dx.doi.org/10.1155/2016/6279162
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spelling doaj-233985f046ea4f11b4edebf1015ca05d2020-11-24T23:31:18ZengHindawi LimitedAdvances in Materials Science and Engineering1687-84341687-84422016-01-01201610.1155/2016/62791626279162Main Parameters Characterization of Bulk CMOS Cross-Like Hall StructuresMaria-Alexandra Paun0Electronics Laboratory, Institute of Electrical Engineering, School of Engineering, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, SwitzerlandA detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological process is performed. To this purpose their main parameters have been evaluated. A three-dimensional physical model was employed in order to evaluate the structures. On this occasion, numerical information on the input resistance, Hall voltage, conduction current, and electrical potential distribution has been obtained. Experimental results for the absolute sensitivity, offset, and offset temperature drift have also been provided. A quadratic behavior of the residual offset with the temperature was obtained and the temperature points leading to the minimum offset for the three Hall cells were identified.http://dx.doi.org/10.1155/2016/6279162
collection DOAJ
language English
format Article
sources DOAJ
author Maria-Alexandra Paun
spellingShingle Maria-Alexandra Paun
Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures
Advances in Materials Science and Engineering
author_facet Maria-Alexandra Paun
author_sort Maria-Alexandra Paun
title Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures
title_short Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures
title_full Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures
title_fullStr Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures
title_full_unstemmed Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures
title_sort main parameters characterization of bulk cmos cross-like hall structures
publisher Hindawi Limited
series Advances in Materials Science and Engineering
issn 1687-8434
1687-8442
publishDate 2016-01-01
description A detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological process is performed. To this purpose their main parameters have been evaluated. A three-dimensional physical model was employed in order to evaluate the structures. On this occasion, numerical information on the input resistance, Hall voltage, conduction current, and electrical potential distribution has been obtained. Experimental results for the absolute sensitivity, offset, and offset temperature drift have also been provided. A quadratic behavior of the residual offset with the temperature was obtained and the temperature points leading to the minimum offset for the three Hall cells were identified.
url http://dx.doi.org/10.1155/2016/6279162
work_keys_str_mv AT mariaalexandrapaun mainparameterscharacterizationofbulkcmoscrosslikehallstructures
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