Self-assembled metal-oxide nanoparticles on GaAs: infrared absorption enabled by localized surface plasmons
Metal-oxides hold promise as superior plasmonic materials in the mid-infrared compared to metals, although their integration over established material technologies still remains challenging. We demonstrate localized surface plasmons in self-assembled, hemispherical CdZnO metal-oxide nanoparticles on...
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doaj-23335de4f38f4c0bba6e9e1b9759981d2021-08-01T12:34:39ZengDe GruyterNanophotonics2192-86062192-86142021-06-011092509251810.1515/nanoph-2021-0167Self-assembled metal-oxide nanoparticles on GaAs: infrared absorption enabled by localized surface plasmonsMartínez Castellano Eduardo0Tamayo-Arriola Julen1Montes Bajo Miguel2Gonzalo Alicia3Stanojević Lazar4Ulloa Jose María5Klymov Oleksii6Yeste Javier7Agouram Said8Muñoz Elías9Muñoz-Sanjosé Vicente10Hierro Adrian11ISOM, Universidad Politécnica de Madrid, Madrid, SpainISOM, Universidad Politécnica de Madrid, Madrid, SpainISOM, Universidad Politécnica de Madrid, Madrid, SpainISOM, Universidad Politécnica de Madrid, Madrid, SpainISOM, Universidad Politécnica de Madrid, Madrid, SpainISOM, Universidad Politécnica de Madrid, Madrid, SpainDepartament de Física Aplicada i Electromagnetisme, Universitat de València, Burjassot, SpainDepartament de Física Aplicada i Electromagnetisme, Universitat de València, Burjassot, SpainDepartament de Física Aplicada i Electromagnetisme, Universitat de València, Burjassot, SpainISOM, Universidad Politécnica de Madrid, Madrid, SpainDepartament de Física Aplicada i Electromagnetisme, Universitat de València, Burjassot, SpainISOM, Universidad Politécnica de Madrid, Madrid, SpainMetal-oxides hold promise as superior plasmonic materials in the mid-infrared compared to metals, although their integration over established material technologies still remains challenging. We demonstrate localized surface plasmons in self-assembled, hemispherical CdZnO metal-oxide nanoparticles on GaAs, as a route to enhance the absorption in mid-infrared photodetectors. In this system, two localized surface plasmon modes are identified at 5.3 and 2.7 μm, which yield an enhancement of the light intensity in the underlying GaAs. In the case of the long-wavelength mode the enhancement is as large as 100 near the interface, and persists at depths down to 50 nm. We show numerically that both modes can be coupled to infrared intersubband transitions in GaAs-based multiple quantum wells, yielding an absorbed power gain as high as 5.5, and allowing light absorption at normal incidence. Experimentally, we demonstrate this coupling in a nanoparticle/multiple quantum well structure, where under p-polarization the intersubband absorption is enhanced by a factor of 2.5 and is still observed under s-polarization, forbidden by the usual absorption selection rules. Thus, the integration of CdZnO on GaAs can help improve the figures of merit of quantum well infrared photodetectors, concept that can be extended to other midinfrared detector technologies.https://doi.org/10.1515/nanoph-2021-0167cdointersubband transitionlocalized surface plasmonmetal-oxidequantum well |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Martínez Castellano Eduardo Tamayo-Arriola Julen Montes Bajo Miguel Gonzalo Alicia Stanojević Lazar Ulloa Jose María Klymov Oleksii Yeste Javier Agouram Said Muñoz Elías Muñoz-Sanjosé Vicente Hierro Adrian |
spellingShingle |
Martínez Castellano Eduardo Tamayo-Arriola Julen Montes Bajo Miguel Gonzalo Alicia Stanojević Lazar Ulloa Jose María Klymov Oleksii Yeste Javier Agouram Said Muñoz Elías Muñoz-Sanjosé Vicente Hierro Adrian Self-assembled metal-oxide nanoparticles on GaAs: infrared absorption enabled by localized surface plasmons Nanophotonics cdo intersubband transition localized surface plasmon metal-oxide quantum well |
author_facet |
Martínez Castellano Eduardo Tamayo-Arriola Julen Montes Bajo Miguel Gonzalo Alicia Stanojević Lazar Ulloa Jose María Klymov Oleksii Yeste Javier Agouram Said Muñoz Elías Muñoz-Sanjosé Vicente Hierro Adrian |
author_sort |
Martínez Castellano Eduardo |
title |
Self-assembled metal-oxide nanoparticles on GaAs: infrared absorption enabled by localized surface plasmons |
title_short |
Self-assembled metal-oxide nanoparticles on GaAs: infrared absorption enabled by localized surface plasmons |
title_full |
Self-assembled metal-oxide nanoparticles on GaAs: infrared absorption enabled by localized surface plasmons |
title_fullStr |
Self-assembled metal-oxide nanoparticles on GaAs: infrared absorption enabled by localized surface plasmons |
title_full_unstemmed |
Self-assembled metal-oxide nanoparticles on GaAs: infrared absorption enabled by localized surface plasmons |
title_sort |
self-assembled metal-oxide nanoparticles on gaas: infrared absorption enabled by localized surface plasmons |
publisher |
De Gruyter |
series |
Nanophotonics |
issn |
2192-8606 2192-8614 |
publishDate |
2021-06-01 |
description |
Metal-oxides hold promise as superior plasmonic materials in the mid-infrared compared to metals, although their integration over established material technologies still remains challenging. We demonstrate localized surface plasmons in self-assembled, hemispherical CdZnO metal-oxide nanoparticles on GaAs, as a route to enhance the absorption in mid-infrared photodetectors. In this system, two localized surface plasmon modes are identified at 5.3 and 2.7 μm, which yield an enhancement of the light intensity in the underlying GaAs. In the case of the long-wavelength mode the enhancement is as large as 100 near the interface, and persists at depths down to 50 nm. We show numerically that both modes can be coupled to infrared intersubband transitions in GaAs-based multiple quantum wells, yielding an absorbed power gain as high as 5.5, and allowing light absorption at normal incidence. Experimentally, we demonstrate this coupling in a nanoparticle/multiple quantum well structure, where under p-polarization the intersubband absorption is enhanced by a factor of 2.5 and is still observed under s-polarization, forbidden by the usual absorption selection rules. Thus, the integration of CdZnO on GaAs can help improve the figures of merit of quantum well infrared photodetectors, concept that can be extended to other midinfrared detector technologies. |
topic |
cdo intersubband transition localized surface plasmon metal-oxide quantum well |
url |
https://doi.org/10.1515/nanoph-2021-0167 |
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