High efficiency green/yellow and red InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

High efficiency green/yellow and red InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

We report on the achievement of high efficiency green, yellow, and red InGaN/AlGaN dot-in-a-wire nanowire light-emitting diodes grown on Si(111) by molecular beam epitaxy. The peak emission wavelengths were altered by varying the growth conditions, including the substrate temperature, and In/Ga flux...

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Bibliographic Details
Main Authors:	M.R. Philip, D.D. Choudhary, M. Djavid, K.Q. Le, J. Piao, H.P.T. Nguyen
Format:	Article
Language:	English
Published:	Elsevier 2017-06-01
Series:	Journal of Science: Advanced Materials and Devices
Subjects:	Light-emitting diodes Molecular beam epitaxy Nanowire Core–shell III-Nitride
Online Access:	http://www.sciencedirect.com/science/article/pii/S2468217917300655

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