Development and optimization of 4.5kV IGBT for power system

Development and optimization of 4.5kV IGBT for power system

In this paper, a 4500V IGBT is investigated by device simulation. The substrate resistivity and thickness of 4500V IGBT are determined by simulation, and the appropriate implantation dose of field stop layer is determined by the simulation. The test results show that the device can not meet the appl...

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Bibliographic Details
Main Authors:	Li Li, Jin Rui, Zhao Ge, Leng Guoqing, Wang Yaohua, Pan Yan
Format:	Article
Language:	English
Published:	EDP Sciences 2018-01-01
Series:	MATEC Web of Conferences
Online Access:	https://doi.org/10.1051/matecconf/201823204059

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