Development and optimization of 4.5kV IGBT for power system

Development and optimization of 4.5kV IGBT for power system

In this paper, a 4500V IGBT is investigated by device simulation. The substrate resistivity and thickness of 4500V IGBT are determined by simulation, and the appropriate implantation dose of field stop layer is determined by the simulation. The test results show that the device can not meet the appl...

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Main Authors: Li Li, Jin Rui, Zhao Ge, Leng Guoqing, Wang Yaohua, Pan Yan
Format: Article
Language:English
Published: EDP Sciences 2018-01-01
Series:MATEC Web of Conferences
Online Access:https://doi.org/10.1051/matecconf/201823204059
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spelling doaj-22edfa51b2c747018899fd3e0f5b1c222021-02-02T03:19:20ZengEDP SciencesMATEC Web of Conferences2261-236X2018-01-012320405910.1051/matecconf/201823204059matecconf_eitce2018_04059Development and optimization of 4.5kV IGBT for power systemLi LiJin RuiZhao GeLeng GuoqingWang YaohuaPan YanIn this paper, a 4500V IGBT is investigated by device simulation. The substrate resistivity and thickness of 4500V IGBT are determined by simulation, and the appropriate implantation dose of field stop layer is determined by the simulation. The test results show that the device can not meet the application requirements of power system, so we optimize the key parameters such as saturation voltage and safe operating area. The optimized device was fabricated and the experimental results show that the breakdown voltage is 6110V, the saturation voltage is 2.6V, and the maximum controllable turn-off current is 160A, which can well meet the simulation expectation and application requirements of power system.https://doi.org/10.1051/matecconf/201823204059
collection DOAJ
language English
format Article
sources DOAJ
author Li Li
Jin Rui
Zhao Ge
Leng Guoqing
Wang Yaohua
Pan Yan
spellingShingle Li Li
Jin Rui
Zhao Ge
Leng Guoqing
Wang Yaohua
Pan Yan
Development and optimization of 4.5kV IGBT for power system
MATEC Web of Conferences
author_facet Li Li
Jin Rui
Zhao Ge
Leng Guoqing
Wang Yaohua
Pan Yan
author_sort Li Li
title Development and optimization of 4.5kV IGBT for power system
title_short Development and optimization of 4.5kV IGBT for power system
title_full Development and optimization of 4.5kV IGBT for power system
title_fullStr Development and optimization of 4.5kV IGBT for power system
title_full_unstemmed Development and optimization of 4.5kV IGBT for power system
title_sort development and optimization of 4.5kv igbt for power system
publisher EDP Sciences
series MATEC Web of Conferences
issn 2261-236X
publishDate 2018-01-01
description In this paper, a 4500V IGBT is investigated by device simulation. The substrate resistivity and thickness of 4500V IGBT are determined by simulation, and the appropriate implantation dose of field stop layer is determined by the simulation. The test results show that the device can not meet the application requirements of power system, so we optimize the key parameters such as saturation voltage and safe operating area. The optimized device was fabricated and the experimental results show that the breakdown voltage is 6110V, the saturation voltage is 2.6V, and the maximum controllable turn-off current is 160A, which can well meet the simulation expectation and application requirements of power system.
url https://doi.org/10.1051/matecconf/201823204059
work_keys_str_mv AT lili developmentandoptimizationof45kvigbtforpowersystem
AT jinrui developmentandoptimizationof45kvigbtforpowersystem
AT zhaoge developmentandoptimizationof45kvigbtforpowersystem
AT lengguoqing developmentandoptimizationof45kvigbtforpowersystem
AT wangyaohua developmentandoptimizationof45kvigbtforpowersystem
AT panyan developmentandoptimizationof45kvigbtforpowersystem
_version_ 1724307973709234176

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