| Summary: | The authors report the deposition of an (Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> amorphous thin film on sapphire substrates by sputter deposition. An amorphous deep ultraviolet (UV) (Al<sub>0.12</sub>Ga<sub>0.88</sub>)<sub>2</sub>O<sub>3</sub> photodetector, with a cutoff wavelength at 230 nm, was also fabricated. With -10 V applied bias, it was found the dark leakage current and the linear dynamic range (LDR) of the fabricated photodetector were about 1.23 × 10<sup>-9</sup> A and 59.51 dB, respectively. With the same -10 V applied bias, the UVC/UVA contrast ratio was larger than 20. With λ<sub>illumination</sub> = 230 nm and -5 V applied bias, it was found noise equivalent power (NEP) and detectivity (D<sup>*</sup>) of the fabricated amorphous deep UV (Al<sub>0.12</sub>Ga<sub>0.88</sub>)<sub>2</sub>O<sub>3</sub> photodetector were 9.94 × 10<sup>-11</sup> W and 2.11 × 10<sup>10</sup> cmHz<sup>1/2</sup>W<sup>-1</sup>, respectively. These results suggest the fabricated amorphous deep UV (Al<sub>0.12</sub>Ga<sub>0.88</sub>)<sub>2</sub>O<sub>3</sub> photodetector herein indicate a cost-effective solution for developing DUV photodetector applications.
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