Recycling the GaN Waste from LED Industry by Pressurized Leaching Method

• Main Authors: Wei-Sheng Chen, Li-Lin Hsu, Li-Pang Wang
• Format: Article
• Language: English
• Published: MDPI AG 2018-10-01
• Series: Metals
• Subjects: gallium nitride; gallium; LED waste; LED recycling; leaching
• Online Access: http://www.mdpi.com/2075-4701/8/10/861

In recent years, with the increasing research and development of the light-emitting diode (LED) industry, which contains gallium nitride (GaN), it is expected that there will be a large amount of related wastes in the future. Gallium has an extremely high economic value, therefore, it is necessary to establish a recycling system for the GaN waste. However, GaN is a direct-gap semiconductor and with its high energy gap, high hardness, and high melting point, these make it difficult to recycle. Therefore, this study will analyze the physical characteristics of LED wastes containing GaN and carry out various leaching methods to leach the valuable metals from the waste optimally. Different acids are used to find out the best reagent for gallium leaching. Different experimental parameters are discussed, such as the effect of the different acid agents, concentration, pressure, liquid-solid mass ratio, temperature and time, which influence the leaching efficiency of gallium. Finally, acid leaching under high pressure is preferred to leach the GaN waste, and hydrochloric acid is used as the leaching solution because of its better leaching efficiency of gallium. Optimally, the leaching efficiency of gallium can reach 98%.