Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs) have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL) measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWH...

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Bibliographic Details
Main Authors:	Qi Wang, Zhigang Jia, Xiaomin Ren, Yingce Yan, Zhiqiang Bian, Xia Zhang, Shiwei Cai, Yongqing Huang
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2013-07-01
Series:	AIP Advances
Online Access:	http://link.aip.org/link/doi/10.1063/1.4815971

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