Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications
Silicon-based electronic-photonic integrated circuits are promising for various applications, but their mid-infrared optical modulation is elusive. Here, tunable mid-infrared electro-absorption modulation, with broadband operation range >140 nm, is achieved in GeSn alloys on Si by controlling the...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2021-04-01
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| Series: | Communications Materials |
| Online Access: | https://doi.org/10.1038/s43246-021-00144-z |