Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching
Abstract Recent progress achieved in metal-assisted chemical etching (MACE) has enabled the production of high-quality micropillar arrays for various optoelectronic applications. Si micropillars produced by MACE often show a porous Si/SiO x shell on crystalline pillar cores introduced by local elect...
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doaj-2114907b527a44e582b3d123598fc2fd2021-10-03T11:25:14ZengNature Publishing GroupScientific Reports2045-23222020-10-0110111010.1038/s41598-020-73445-xHeterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etchingYang Qian0David J. Magginetti1Seokmin Jeon2Yohan Yoon3Tony L. Olsen4Maoji Wang5Jordan M. Gerton6Heayoung P. Yoon7Electrical and Computer Engineering, University of UtahMaterials Science and Engineering, University of UtahUS Naval Research LaboratoryUS Naval Research LaboratoryUtah Nanofab, University of UtahPhysics and Astronomy, University of UtahPhysics and Astronomy, University of UtahElectrical and Computer Engineering, University of UtahAbstract Recent progress achieved in metal-assisted chemical etching (MACE) has enabled the production of high-quality micropillar arrays for various optoelectronic applications. Si micropillars produced by MACE often show a porous Si/SiO x shell on crystalline pillar cores introduced by local electrochemical reactions. In this paper, we report the distinct optoelectronic characteristics of the porous Si/SiO x shell correlated to their chemical compositions. Local photoluminescent (PL) images obtained with an immersion oil objective lens in confocal microscopy show a red emission peak (≈ 650 nm) along the perimeter of the pillars that is threefold stronger compared to their center. On the basis of our analysis, we find an unexpected PL increase (≈ 540 nm) at the oil/shell interface. We suggest that both PL enhancements are mainly attributed to the porous structures, a similar behavior observed in previous MACE studies. Surface potential maps simultaneously recorded with topography reveal a significantly high surface potential on the sidewalls of MACE-synthesized pillars (+ 0.5 V), which is restored to the level of planar Si control (− 0.5 V) after removing SiO x in hydrofluoric acid. These distinct optoelectronic characteristics of the Si/SiO x shell can be beneficial for various sensor architectures.https://doi.org/10.1038/s41598-020-73445-x |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Yang Qian David J. Magginetti Seokmin Jeon Yohan Yoon Tony L. Olsen Maoji Wang Jordan M. Gerton Heayoung P. Yoon |
spellingShingle |
Yang Qian David J. Magginetti Seokmin Jeon Yohan Yoon Tony L. Olsen Maoji Wang Jordan M. Gerton Heayoung P. Yoon Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching Scientific Reports |
author_facet |
Yang Qian David J. Magginetti Seokmin Jeon Yohan Yoon Tony L. Olsen Maoji Wang Jordan M. Gerton Heayoung P. Yoon |
author_sort |
Yang Qian |
title |
Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching |
title_short |
Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching |
title_full |
Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching |
title_fullStr |
Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching |
title_full_unstemmed |
Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching |
title_sort |
heterogeneous optoelectronic characteristics of si micropillar arrays fabricated by metal-assisted chemical etching |
publisher |
Nature Publishing Group |
series |
Scientific Reports |
issn |
2045-2322 |
publishDate |
2020-10-01 |
description |
Abstract Recent progress achieved in metal-assisted chemical etching (MACE) has enabled the production of high-quality micropillar arrays for various optoelectronic applications. Si micropillars produced by MACE often show a porous Si/SiO x shell on crystalline pillar cores introduced by local electrochemical reactions. In this paper, we report the distinct optoelectronic characteristics of the porous Si/SiO x shell correlated to their chemical compositions. Local photoluminescent (PL) images obtained with an immersion oil objective lens in confocal microscopy show a red emission peak (≈ 650 nm) along the perimeter of the pillars that is threefold stronger compared to their center. On the basis of our analysis, we find an unexpected PL increase (≈ 540 nm) at the oil/shell interface. We suggest that both PL enhancements are mainly attributed to the porous structures, a similar behavior observed in previous MACE studies. Surface potential maps simultaneously recorded with topography reveal a significantly high surface potential on the sidewalls of MACE-synthesized pillars (+ 0.5 V), which is restored to the level of planar Si control (− 0.5 V) after removing SiO x in hydrofluoric acid. These distinct optoelectronic characteristics of the Si/SiO x shell can be beneficial for various sensor architectures. |
url |
https://doi.org/10.1038/s41598-020-73445-x |
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