Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation

Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation

The process of tin-induced crystallization of amorphous silicon under the influence of different types of laser irradiation was investigated using the method of Raman scattering by thin-film Si-Sn-Si structures. The dependences of the size and concentration of Si nanocrystals on the power of laser r...

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Bibliographic Details
Main Authors: V.B. Neimash, V.V. Melnyk, L.L. Fedorenko, P.Ye. Shepeliavyi, V.V. Strelchuk, A.S. Nikolayenko, M.V. Isaiev, A.G. Kuzmich
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2017-12-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
thin film
metal-induced crystallization
pulsed laser treatment
Online Access:http://journal-spqeo.org.ua/n4_2017/P396-405abstr.html

Internet

http://journal-spqeo.org.ua/n4_2017/P396-405abstr.html

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