Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation

Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation

The effects of oxygen-insertion technology and low-energy fluorine (F) implantation on the Schottky barrier height (ΦBp) of a Pt/Ti/p-type Si metal–semiconductor contact are studied via electrical characterizations of Schottky diodes, physical analyses by secondary ion mass spectrometry , and chemic...

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Bibliographic Details
Main Authors:	Xi Zhang, Hideki Takeuchi, Daniel Connelly, Marek Hytha, Robert J. Mears, Leonard M. Rubin, Tsu-Jae King Liu
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2020-06-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5144507

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