Modelling and optimization of SiC MOSFET switching voltage and current overshoots in a half‐bridge configuration
Abstract Due to the high‐speed switching, the switching process of a silicon carbide (SiC) metal oxide field effect transistor (MOSFET) in a practical circuit is susceptible to parasitics and exhibits significant current and voltage overshoots. This may subsequently lower the efficiency of the devic...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-07-01
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| Series: | IET Power Electronics |
| Online Access: | https://doi.org/10.1049/pel2.12146 |