Research progress in controllable synthesis of graphene by plasma-enhanced chemical vapor deposition

• Main Authors: LI Na, ZHANG Ru-jing, ZHEN Zhen, XU Zhen-hua, HE Li-min
• Format: Article
• Language: zho
• Published: Journal of Materials Engineering 2020-07-01
• Series: Journal of Materials Engineering
• Subjects: graphene; pecvd; nucleation and growth; growth mechanism
• Online Access: http://jme.biam.ac.cn/CN/Y2020/V48/I7/36

Due to its one-atom thickness,excellent optical and electrical properties, graphene has great potential applications in fields of transistors, solar cells, supercapacitors and sensors. For further development of practical applications, controllable synthesis of high-quality graphene is of great importance.Because of its advantage in <i>in-situ</i> growth on various substrates at low temperature, plasma-enhanced chemical vapor deposition(PECVD) has become one of the most promising strategies for the synthesis of graphene in the future. In this paper, the effect of several key factors on the growth of graphene by PECVD,such as plasma power, temperature, substrates and pressure was summarized. Two growth mechanisms including nucleation and coalescence mechanism and etching and edge growth mechanism were reviewed. Furthermore, the challenges and development of graphene were also discussed. In future work, the controllable preparation of graphene on the nucleation and growth of graphene will be essential to achieve large-area and high-quality graphene by PECVD at low temperature, laying the foundation for the application of graphene synthesized by PECVD in electronics and other fields.