Optical properties of CuSe thin films - band gap determination

• Main Authors: Petrović Milica, Gilić Martina, Ćirković Jovana, Romčević Maja, Romčević Nebojša, Trajić Jelena, Yahia Ibrahim
• Format: Article
• Language: English
• Published: International Institute for the Science of Sintering, Beograd 2017-01-01
• Series: Science of Sintering
• Subjects: copper selenide; thin films; semiconductors; UV-VIS-NIR spectroscopy; photoluminescence spectroscopy
• Online Access: http://www.doiserbia.nb.rs/img/doi/0350-820X/2017/0350-820X1702167P.pdf

Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV-VIS-NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be ~2.7 eV and that for indirect transition it is ~1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III45003]