Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation

Scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and low energy electron diffraction have been used to follow the growth of Si films on Ag(111) at various temperatures. Using a simple growth model, we have simulated the distribution of film thickness as a function of coverage d...

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Bibliographic Details
Main Authors: Alberto Curcella, Romain Bernard, Yves Borensztein, Silvia Pandolfi, Geoffroy Prévot
Format: Article
Language:English
Published: Beilstein-Institut 2018-01-01
Series:Beilstein Journal of Nanotechnology
Subjects:
Online Access:https://doi.org/10.3762/bjnano.9.7