The growth of sapphire single crystals
Sapphire (Al2O3) single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grash of numbers. Acritical crystal diameter dc = 20 mm and the critical rat...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Serbian Chemical Society
2001-01-01
|
| Series: | Journal of the Serbian Chemical Society |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/0352-5139/2001/0352-51390106411G.pdf |
| Summary: | Sapphire (Al2O3) single crystals were grown by the Czochralski technique both
in air and argon atmospheres. The conditions for growing sapphire single
crystals were calculated by using a combination of Reynolds and Grash of
numbers. Acritical crystal diameter dc = 20 mm and the critical rate of
rotation c = 20 rpm were calculated from the hydrodynamics of the melt.
The value of the rate of crystal growth was experimentally found to be 3.5
mm/h. According to our previous experiments, it was confirmed that three
hours exposures to conc. H3PO4 at 593 K was suitable for chemical polishing.
Also, three hours exposure to conc.H3PO4 at 523Kwas found to be a suitable
etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm
were determined by X-ray powder diffraction. The obtained results are
discussed and compared with published data. |
|---|---|
| ISSN: | 0352-5139 1820-7421 |