Mo-La<sub>2</sub>O<sub>3</sub> Multilayer Metallization Systems for High Temperature Surface Acoustic Wave Sensor Devices

Developing advanced thin film materials is the key challenge in high-temperature applications of surface acoustic wave sensor devices. One hundred nanometer thick (Mo-La<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>2...

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Main Authors: Siegfried B. Menzel, Marietta Seifert, Abhinav Priyadarshi, Gayatri K. Rane, Eunmi Park, Steffen Oswald, Thomas Gemming
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/12/17/2651
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spelling doaj-1f0bb30bc6ff442789fcb8a7845789fa2020-11-25T01:56:33ZengMDPI AGMaterials1996-19442019-08-011217265110.3390/ma12172651ma12172651Mo-La<sub>2</sub>O<sub>3</sub> Multilayer Metallization Systems for High Temperature Surface Acoustic Wave Sensor DevicesSiegfried B. Menzel0Marietta Seifert1Abhinav Priyadarshi2Gayatri K. Rane3Eunmi Park4Steffen Oswald5Thomas Gemming6Leibniz IFW Dresden, Helmholtzstraße 20, 01069 Dresden, GermanyLeibniz IFW Dresden, Helmholtzstraße 20, 01069 Dresden, GermanyLeibniz IFW Dresden, Helmholtzstraße 20, 01069 Dresden, GermanyLeibniz IFW Dresden, Helmholtzstraße 20, 01069 Dresden, GermanyLeibniz IFW Dresden, Helmholtzstraße 20, 01069 Dresden, GermanyLeibniz IFW Dresden, Helmholtzstraße 20, 01069 Dresden, GermanyLeibniz IFW Dresden, Helmholtzstraße 20, 01069 Dresden, GermanyDeveloping advanced thin film materials is the key challenge in high-temperature applications of surface acoustic wave sensor devices. One hundred nanometer thick (Mo-La<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>2</mn> </msub> </semantics> </math> </inline-formula>O<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>3</mn> </msub> </semantics> </math> </inline-formula>) multilayer systems were fabricated at room temperature on thermally oxidized (100) Si substrates (SiO<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>2</mn> </msub> </semantics> </math> </inline-formula>/Si) to study the effect of lanthanum oxide on the electrical resistivity of molybdenum thin films and their high-temperature stability. The multilayer systems were deposited by the magnetron sputter deposition of extremely thin (&#8804;1 nm) La interlayers in between adjacent Mo layers. After deposition of each La layer the process was interrupted for 25 to 60 min to oxidize the La using the residual oxygen in the high vacuum of the deposition chamber. The samples were annealed at 800 <inline-formula> <math display="inline"> <semantics> <msup> <mrow></mrow> <mo>∘</mo> </msup> </semantics> </math> </inline-formula>C in high vacuum for up to 120 h. In case of a 1 nm thick La interlayer in-between the Mo a continuous layer of La<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>2</mn> </msub> </semantics> </math> </inline-formula>O<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>3</mn> </msub> </semantics> </math> </inline-formula> is formed. For thinner La layers an interlayer between adjacent Mo layers is observed consisting of a (La<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>2</mn> </msub> </semantics> </math> </inline-formula>O<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>3</mn> </msub> </semantics> </math> </inline-formula>-Mo) mixed structure of molybdenum and nm-sized lanthanum oxide particles. Measurements show that the (Mo-La<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>2</mn> </msub> </semantics> </math> </inline-formula>O<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>3</mn> </msub> </semantics> </math> </inline-formula>) multilayer systems on SiO<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>2</mn> </msub> </semantics> </math> </inline-formula>/Si substrates are stable at least up to 800 <inline-formula> <math display="inline"> <semantics> <msup> <mrow></mrow> <mo>∘</mo> </msup> </semantics> </math> </inline-formula>C for 120 h in high vacuum conditions.https://www.mdpi.com/1996-1944/12/17/2651SAW sensorsinterdigital transducer materialhigh-temperature stabilitydispersion strengtheningMo-La<sub>2</sub>O<sub>3</sub> multilayers
collection DOAJ
language English
format Article
sources DOAJ
author Siegfried B. Menzel
Marietta Seifert
Abhinav Priyadarshi
Gayatri K. Rane
Eunmi Park
Steffen Oswald
Thomas Gemming
spellingShingle Siegfried B. Menzel
Marietta Seifert
Abhinav Priyadarshi
Gayatri K. Rane
Eunmi Park
Steffen Oswald
Thomas Gemming
Mo-La<sub>2</sub>O<sub>3</sub> Multilayer Metallization Systems for High Temperature Surface Acoustic Wave Sensor Devices
Materials
SAW sensors
interdigital transducer material
high-temperature stability
dispersion strengthening
Mo-La<sub>2</sub>O<sub>3</sub> multilayers
author_facet Siegfried B. Menzel
Marietta Seifert
Abhinav Priyadarshi
Gayatri K. Rane
Eunmi Park
Steffen Oswald
Thomas Gemming
author_sort Siegfried B. Menzel
title Mo-La<sub>2</sub>O<sub>3</sub> Multilayer Metallization Systems for High Temperature Surface Acoustic Wave Sensor Devices
title_short Mo-La<sub>2</sub>O<sub>3</sub> Multilayer Metallization Systems for High Temperature Surface Acoustic Wave Sensor Devices
title_full Mo-La<sub>2</sub>O<sub>3</sub> Multilayer Metallization Systems for High Temperature Surface Acoustic Wave Sensor Devices
title_fullStr Mo-La<sub>2</sub>O<sub>3</sub> Multilayer Metallization Systems for High Temperature Surface Acoustic Wave Sensor Devices
title_full_unstemmed Mo-La<sub>2</sub>O<sub>3</sub> Multilayer Metallization Systems for High Temperature Surface Acoustic Wave Sensor Devices
title_sort mo-la<sub>2</sub>o<sub>3</sub> multilayer metallization systems for high temperature surface acoustic wave sensor devices
publisher MDPI AG
series Materials
issn 1996-1944
publishDate 2019-08-01
description Developing advanced thin film materials is the key challenge in high-temperature applications of surface acoustic wave sensor devices. One hundred nanometer thick (Mo-La<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>2</mn> </msub> </semantics> </math> </inline-formula>O<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>3</mn> </msub> </semantics> </math> </inline-formula>) multilayer systems were fabricated at room temperature on thermally oxidized (100) Si substrates (SiO<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>2</mn> </msub> </semantics> </math> </inline-formula>/Si) to study the effect of lanthanum oxide on the electrical resistivity of molybdenum thin films and their high-temperature stability. The multilayer systems were deposited by the magnetron sputter deposition of extremely thin (&#8804;1 nm) La interlayers in between adjacent Mo layers. After deposition of each La layer the process was interrupted for 25 to 60 min to oxidize the La using the residual oxygen in the high vacuum of the deposition chamber. The samples were annealed at 800 <inline-formula> <math display="inline"> <semantics> <msup> <mrow></mrow> <mo>∘</mo> </msup> </semantics> </math> </inline-formula>C in high vacuum for up to 120 h. In case of a 1 nm thick La interlayer in-between the Mo a continuous layer of La<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>2</mn> </msub> </semantics> </math> </inline-formula>O<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>3</mn> </msub> </semantics> </math> </inline-formula> is formed. For thinner La layers an interlayer between adjacent Mo layers is observed consisting of a (La<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>2</mn> </msub> </semantics> </math> </inline-formula>O<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>3</mn> </msub> </semantics> </math> </inline-formula>-Mo) mixed structure of molybdenum and nm-sized lanthanum oxide particles. Measurements show that the (Mo-La<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>2</mn> </msub> </semantics> </math> </inline-formula>O<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>3</mn> </msub> </semantics> </math> </inline-formula>) multilayer systems on SiO<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mn>2</mn> </msub> </semantics> </math> </inline-formula>/Si substrates are stable at least up to 800 <inline-formula> <math display="inline"> <semantics> <msup> <mrow></mrow> <mo>∘</mo> </msup> </semantics> </math> </inline-formula>C for 120 h in high vacuum conditions.
topic SAW sensors
interdigital transducer material
high-temperature stability
dispersion strengthening
Mo-La<sub>2</sub>O<sub>3</sub> multilayers
url https://www.mdpi.com/1996-1944/12/17/2651
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