Enhanced Thermoelectric Performance of Te-Doped Bi2Se3−xTex Bulks by Self-Propagating High-Temperature Synthesis
Polycrystalline Bi2Se3−xTex (x = 0~1.5) samples were prepared by self-propagating high-temperature synthesis (SHS) combined with spark plasma sintering (SPS) and their thermoelectric properties were investigated. The SHS-SPS process can shorten the time with few energy consumptions, and obtain almos...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2017-08-01
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Series: | Crystals |
Subjects: | |
Online Access: | https://www.mdpi.com/2073-4352/7/9/257 |
Summary: | Polycrystalline Bi2Se3−xTex (x = 0~1.5) samples were prepared by self-propagating high-temperature synthesis (SHS) combined with spark plasma sintering (SPS) and their thermoelectric properties were investigated. The SHS-SPS process can shorten the time with few energy consumptions, and obtain almost pure Bi2Se3-based phases. Consequently, the Se vacancies and anti-site defects contribute to the converged carrier concentration of ~2 × 1019 cm−3 while the increased carrier effective mass enhances the Seebeck coefficient to more than −158 μV K−1 over the entire temperature range. The lattice thermal conductivity is suppressed from 1.07 Wm−1 K−1 for the pristine specimen to ~0.6 Wm−1 K−1 for Te-substitution samples at 300 K because of point defects caused by the difference of mass and size between Te and Se atoms. Coupled with the enhanced power factor and reduced lattice thermal conductivity, a high ZT of 0.67 can be obtained at 473 K for the Bi2Se1.5Te1.5 sample. Our results reveal that Te-substitution based on the SHS-SPS method is highly-efficient and can improve the thermoelectric properties of Bi2Se3-based materials largely. |
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ISSN: | 2073-4352 |