Homodyne Spectroscopy with Broadband Terahertz Power Detector Based on 90-nm Silicon CMOS Transistor
Over the last two decades, photomixer-based continuous wave systems developed into versatile and practical tools for terahertz (THz) spectroscopy. The high responsivity to the THz field amplitude of photomixer-based systems is predetermined by the homodyne detection principle that allows the system...
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MDPI AG
2021-01-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/11/1/412 |
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doaj-1e8e65fdedcf4c0996dc333912a716c12021-01-05T00:01:21ZengMDPI AGApplied Sciences2076-34172021-01-011141241210.3390/app11010412Homodyne Spectroscopy with Broadband Terahertz Power Detector Based on 90-nm Silicon CMOS TransistorKęstutis Ikamas0Dmytro B. But1Alvydas Lisauskas2Institute of Applied Electrodynamics and Telecommunications, Vilnius University, LT-10257 Vilnius, LithuaniaCENTERA Laboratory, Institute of High Pressure Physics PAS, 01-142 Warsaw, PolandInstitute of Applied Electrodynamics and Telecommunications, Vilnius University, LT-10257 Vilnius, LithuaniaOver the last two decades, photomixer-based continuous wave systems developed into versatile and practical tools for terahertz (THz) spectroscopy. The high responsivity to the THz field amplitude of photomixer-based systems is predetermined by the homodyne detection principle that allows the system to have high sensitivity. Here, we show that the advantages of homodyne detection can be exploited with broadband power detectors combined with two photomixer sources. For this, we employ a THz detector based on a complementary metal-oxide-semiconductor field-effect transistor and a broadband bow-tie antenna (TeraFET). At 500 GHz and an effective noise bandwidth of 1 Hz, the response from one photomixer-based THz source resulted in an about 43 dB signal-to-noise ratio (SNR). We demonstrate that by employing a homodyne detection system by overlaying the radiation from two photomixers, the SNR can reach up to 70 dB at the same frequency with an integration time 100 ms. The improvement in SNR and the spectroscopic evidence for water vapor lines demonstrated up to 2.2 THz allow us to conclude that these detectors can be successfully used in practical continuous wave THz spectrometry systems.https://www.mdpi.com/2076-3417/11/1/412THz power detectorterahertz detectorbroadband antennafield-effect transistorhomodyne detectionterahertz spectroscopy |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Kęstutis Ikamas Dmytro B. But Alvydas Lisauskas |
| spellingShingle |
Kęstutis Ikamas Dmytro B. But Alvydas Lisauskas Homodyne Spectroscopy with Broadband Terahertz Power Detector Based on 90-nm Silicon CMOS Transistor Applied Sciences THz power detector terahertz detector broadband antenna field-effect transistor homodyne detection terahertz spectroscopy |
| author_facet |
Kęstutis Ikamas Dmytro B. But Alvydas Lisauskas |
| author_sort |
Kęstutis Ikamas |
| title |
Homodyne Spectroscopy with Broadband Terahertz Power Detector Based on 90-nm Silicon CMOS Transistor |
| title_short |
Homodyne Spectroscopy with Broadband Terahertz Power Detector Based on 90-nm Silicon CMOS Transistor |
| title_full |
Homodyne Spectroscopy with Broadband Terahertz Power Detector Based on 90-nm Silicon CMOS Transistor |
| title_fullStr |
Homodyne Spectroscopy with Broadband Terahertz Power Detector Based on 90-nm Silicon CMOS Transistor |
| title_full_unstemmed |
Homodyne Spectroscopy with Broadband Terahertz Power Detector Based on 90-nm Silicon CMOS Transistor |
| title_sort |
homodyne spectroscopy with broadband terahertz power detector based on 90-nm silicon cmos transistor |
| publisher |
MDPI AG |
| series |
Applied Sciences |
| issn |
2076-3417 |
| publishDate |
2021-01-01 |
| description |
Over the last two decades, photomixer-based continuous wave systems developed into versatile and practical tools for terahertz (THz) spectroscopy. The high responsivity to the THz field amplitude of photomixer-based systems is predetermined by the homodyne detection principle that allows the system to have high sensitivity. Here, we show that the advantages of homodyne detection can be exploited with broadband power detectors combined with two photomixer sources. For this, we employ a THz detector based on a complementary metal-oxide-semiconductor field-effect transistor and a broadband bow-tie antenna (TeraFET). At 500 GHz and an effective noise bandwidth of 1 Hz, the response from one photomixer-based THz source resulted in an about 43 dB signal-to-noise ratio (SNR). We demonstrate that by employing a homodyne detection system by overlaying the radiation from two photomixers, the SNR can reach up to 70 dB at the same frequency with an integration time 100 ms. The improvement in SNR and the spectroscopic evidence for water vapor lines demonstrated up to 2.2 THz allow us to conclude that these detectors can be successfully used in practical continuous wave THz spectrometry systems. |
| topic |
THz power detector terahertz detector broadband antenna field-effect transistor homodyne detection terahertz spectroscopy |
| url |
https://www.mdpi.com/2076-3417/11/1/412 |
| work_keys_str_mv |
AT kestutisikamas homodynespectroscopywithbroadbandterahertzpowerdetectorbasedon90nmsiliconcmostransistor AT dmytrobbut homodynespectroscopywithbroadbandterahertzpowerdetectorbasedon90nmsiliconcmostransistor AT alvydaslisauskas homodynespectroscopywithbroadbandterahertzpowerdetectorbasedon90nmsiliconcmostransistor |
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