Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells
The accurate determination of the electrical properties of photovoltaic devices is of utmost importance to predict and optimize their overall optoelectronic performance. For example, the minority carrier lifetime and the carrier diffusion length have a strong relationship with the carrier recombinat...
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Online Access: | https://www.mdpi.com/1996-1073/13/9/2165 |
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doaj-1e3eb3f1934e4dc6925f9f0e9f2c32022020-11-25T03:00:40ZengMDPI AGEnergies1996-10732020-05-01132165216510.3390/en13092165Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar CellsRehab Ramadan0Raúl J. Martín-Palma1Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid, SpainDepartamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid, SpainThe accurate determination of the electrical properties of photovoltaic devices is of utmost importance to predict and optimize their overall optoelectronic performance. For example, the minority carrier lifetime and the carrier diffusion length have a strong relationship with the carrier recombination rate. Additionally, parasitic resistances have an important effect on the fill factor of a solar cell. Within this context, the alternating current (AC) and direct current (DC) electrical characteristics of Si-based metal–insulator–semiconductor (MIS) Schottky barrier diodes with the basic structure Al/Si/TiO<sub>2</sub>/NiCr were studied, aiming at using them as photovoltaic devices. The basic diode structure was modified by adding nanostructured porous silicon (nanoPS) layers and by infiltrating silver nanoparticles (AgNPs) into the nanoPS layers, leading to Al/Si+nanoPS/TiO<sub>2</sub>/NiCr and Al/Si+nanoPS+AgNPs/TiO<sub>2</sub>/NiCr structures, respectively. The AC electrical properties were studied using a combination of electrochemical impedance spectroscopy and Mott–Schottky analysis, while the DC electrical properties were determined from current–voltage measurements. From the experimental results, an AC equivalent circuit model was proposed for the three different MIS Schottky barrier diodes under study. Additionally, the most significant electrical parameters were calculated. The results show a remarkable improvement in the performance of the MIS Schottky barrier diodes upon the addition of hybrid nanoPS layers with embedded Ag nanoparticles, opening the way to their use as photovoltaic devices.https://www.mdpi.com/1996-1073/13/9/2165MIS Schottky barrier diodesnanoporous siliconsilver nanoparticleselectrochemical impedance spectroscopyMott–Schottky theory |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Rehab Ramadan Raúl J. Martín-Palma |
spellingShingle |
Rehab Ramadan Raúl J. Martín-Palma Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells Energies MIS Schottky barrier diodes nanoporous silicon silver nanoparticles electrochemical impedance spectroscopy Mott–Schottky theory |
author_facet |
Rehab Ramadan Raúl J. Martín-Palma |
author_sort |
Rehab Ramadan |
title |
Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells |
title_short |
Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells |
title_full |
Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells |
title_fullStr |
Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells |
title_full_unstemmed |
Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells |
title_sort |
electrical characterization of mis schottky barrier diodes based on nanostructured porous silicon and silver nanoparticles with applications in solar cells |
publisher |
MDPI AG |
series |
Energies |
issn |
1996-1073 |
publishDate |
2020-05-01 |
description |
The accurate determination of the electrical properties of photovoltaic devices is of utmost importance to predict and optimize their overall optoelectronic performance. For example, the minority carrier lifetime and the carrier diffusion length have a strong relationship with the carrier recombination rate. Additionally, parasitic resistances have an important effect on the fill factor of a solar cell. Within this context, the alternating current (AC) and direct current (DC) electrical characteristics of Si-based metal–insulator–semiconductor (MIS) Schottky barrier diodes with the basic structure Al/Si/TiO<sub>2</sub>/NiCr were studied, aiming at using them as photovoltaic devices. The basic diode structure was modified by adding nanostructured porous silicon (nanoPS) layers and by infiltrating silver nanoparticles (AgNPs) into the nanoPS layers, leading to Al/Si+nanoPS/TiO<sub>2</sub>/NiCr and Al/Si+nanoPS+AgNPs/TiO<sub>2</sub>/NiCr structures, respectively. The AC electrical properties were studied using a combination of electrochemical impedance spectroscopy and Mott–Schottky analysis, while the DC electrical properties were determined from current–voltage measurements. From the experimental results, an AC equivalent circuit model was proposed for the three different MIS Schottky barrier diodes under study. Additionally, the most significant electrical parameters were calculated. The results show a remarkable improvement in the performance of the MIS Schottky barrier diodes upon the addition of hybrid nanoPS layers with embedded Ag nanoparticles, opening the way to their use as photovoltaic devices. |
topic |
MIS Schottky barrier diodes nanoporous silicon silver nanoparticles electrochemical impedance spectroscopy Mott–Schottky theory |
url |
https://www.mdpi.com/1996-1073/13/9/2165 |
work_keys_str_mv |
AT rehabramadan electricalcharacterizationofmisschottkybarrierdiodesbasedonnanostructuredporoussiliconandsilvernanoparticleswithapplicationsinsolarcells AT rauljmartinpalma electricalcharacterizationofmisschottkybarrierdiodesbasedonnanostructuredporoussiliconandsilvernanoparticleswithapplicationsinsolarcells |
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