Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy

Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy

Abstract We report on a temperature-dependent band gap property of epitaxial MoSe2 ultrathin films. We prepare uniform MoSe2 films epitaxially grown on graphenized SiC substrates with controlled thicknesses by molecular beam epitaxy. Spectroscopic ellipsometry measurements upon heating sample in ult...

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Bibliographic Details
Main Authors: Byoung Ki Choi, Minu Kim, Kwang-Hwan Jung, Jwasoon Kim, Kyu-Sang Yu, Young Jun Chang
Format: Article
Language:English
Published: SpringerOpen 2017-08-01
Series:Nanoscale Research Letters
Subjects:
MoSe2
Temperature-dependent band gap
Thermal stability
Molecular beam epitaxy
Spectroscopic ellipsometry
Time of flight medium-energy ion-scattering spectroscopy
Online Access:http://link.springer.com/article/10.1186/s11671-017-2266-7

Internet

http://link.springer.com/article/10.1186/s11671-017-2266-7

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