Bright room temperature single photon source at telecom range in cubic silicon carbide

Room-temperature solid-state single photon emitters in the telecom range are suitable for quantum communication. Here, the authors observe defects in high-purity 3C-SiC epitaxy layers grown on a silicon substrate, with good characteristics in terms of brightness, emission’s polarization and photosta...

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Main Authors:	Junfeng Wang, Yu Zhou, Ziyu Wang, Abdullah Rasmita, Jianqun Yang, Xingji Li, Hans Jürgen von Bardeleben, Weibo Gao
Format:	Article
Language:	English
Published:	Nature Publishing Group 2018-10-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/s41467-018-06605-3

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spelling	doaj-1cfc7e198e0f475ca9436ce74b2c57422021-05-11T09:36:20ZengNature Publishing GroupNature Communications2041-17232018-10-01911610.1038/s41467-018-06605-3Bright room temperature single photon source at telecom range in cubic silicon carbideJunfeng Wang0Yu Zhou1Ziyu Wang2Abdullah Rasmita3Jianqun Yang4Xingji Li5Hans Jürgen von Bardeleben6Weibo Gao7Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological UniversityDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological UniversityDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological UniversityDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological UniversitySchool of Materials Science and Engineering, Harbin institute of TechnologySchool of Materials Science and Engineering, Harbin institute of TechnologyINSP, Université Pierre et Marie Curie, UMR 7588 au CNRS 4 place JussieuDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological UniversityRoom-temperature solid-state single photon emitters in the telecom range are suitable for quantum communication. Here, the authors observe defects in high-purity 3C-SiC epitaxy layers grown on a silicon substrate, with good characteristics in terms of brightness, emission’s polarization and photostability.https://doi.org/10.1038/s41467-018-06605-3
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Junfeng Wang Yu Zhou Ziyu Wang Abdullah Rasmita Jianqun Yang Xingji Li Hans Jürgen von Bardeleben Weibo Gao
spellingShingle	Junfeng Wang Yu Zhou Ziyu Wang Abdullah Rasmita Jianqun Yang Xingji Li Hans Jürgen von Bardeleben Weibo Gao Bright room temperature single photon source at telecom range in cubic silicon carbide Nature Communications
author_facet	Junfeng Wang Yu Zhou Ziyu Wang Abdullah Rasmita Jianqun Yang Xingji Li Hans Jürgen von Bardeleben Weibo Gao
author_sort	Junfeng Wang
title	Bright room temperature single photon source at telecom range in cubic silicon carbide
title_short	Bright room temperature single photon source at telecom range in cubic silicon carbide
title_full	Bright room temperature single photon source at telecom range in cubic silicon carbide
title_fullStr	Bright room temperature single photon source at telecom range in cubic silicon carbide
title_full_unstemmed	Bright room temperature single photon source at telecom range in cubic silicon carbide
title_sort	bright room temperature single photon source at telecom range in cubic silicon carbide
publisher	Nature Publishing Group
series	Nature Communications
issn	2041-1723
publishDate	2018-10-01
description	Room-temperature solid-state single photon emitters in the telecom range are suitable for quantum communication. Here, the authors observe defects in high-purity 3C-SiC epitaxy layers grown on a silicon substrate, with good characteristics in terms of brightness, emission’s polarization and photostability.
url	https://doi.org/10.1038/s41467-018-06605-3
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Bright room temperature single photon source at telecom range in cubic silicon carbide

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