Using of the Modern Semiconductor Devices Based on the SiC

This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide) inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT,...

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Bibliographic Details
Main Author: Pavel Drabek
Format: Article
Language:English
Published: VSB-Technical University of Ostrava 2008-01-01
Series:Advances in Electrical and Electronic Engineering
Subjects:
sic
Online Access:http://advances.utc.sk/index.php/AEEE/article/view/68
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spelling doaj-1cd1634e5ba34b3787f00e15f3f638812021-10-11T08:02:57ZengVSB-Technical University of OstravaAdvances in Electrical and Electronic Engineering1336-13761804-31192008-01-0171 - 210610958Using of the Modern Semiconductor Devices Based on the SiCPavel DrabekThis paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide) inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors).http://advances.utc.sk/index.php/AEEE/article/view/68semiconductor devicessicmosfet.
collection DOAJ
language English
format Article
sources DOAJ
author Pavel Drabek
spellingShingle Pavel Drabek
Using of the Modern Semiconductor Devices Based on the SiC
Advances in Electrical and Electronic Engineering
semiconductor devices
sic
mosfet.
author_facet Pavel Drabek
author_sort Pavel Drabek
title Using of the Modern Semiconductor Devices Based on the SiC
title_short Using of the Modern Semiconductor Devices Based on the SiC
title_full Using of the Modern Semiconductor Devices Based on the SiC
title_fullStr Using of the Modern Semiconductor Devices Based on the SiC
title_full_unstemmed Using of the Modern Semiconductor Devices Based on the SiC
title_sort using of the modern semiconductor devices based on the sic
publisher VSB-Technical University of Ostrava
series Advances in Electrical and Electronic Engineering
issn 1336-1376
1804-3119
publishDate 2008-01-01
description This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide) inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors).
topic semiconductor devices
sic
mosfet.
url http://advances.utc.sk/index.php/AEEE/article/view/68
work_keys_str_mv AT paveldrabek usingofthemodernsemiconductordevicesbasedonthesic
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