Using of the Modern Semiconductor Devices Based on the SiC
This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide) inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT,...
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VSB-Technical University of Ostrava
2008-01-01
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Series: | Advances in Electrical and Electronic Engineering |
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Online Access: | http://advances.utc.sk/index.php/AEEE/article/view/68 |
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doaj-1cd1634e5ba34b3787f00e15f3f638812021-10-11T08:02:57ZengVSB-Technical University of OstravaAdvances in Electrical and Electronic Engineering1336-13761804-31192008-01-0171 - 210610958Using of the Modern Semiconductor Devices Based on the SiCPavel DrabekThis paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide) inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors).http://advances.utc.sk/index.php/AEEE/article/view/68semiconductor devicessicmosfet. |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Pavel Drabek |
spellingShingle |
Pavel Drabek Using of the Modern Semiconductor Devices Based on the SiC Advances in Electrical and Electronic Engineering semiconductor devices sic mosfet. |
author_facet |
Pavel Drabek |
author_sort |
Pavel Drabek |
title |
Using of the Modern Semiconductor Devices Based on the SiC |
title_short |
Using of the Modern Semiconductor Devices Based on the SiC |
title_full |
Using of the Modern Semiconductor Devices Based on the SiC |
title_fullStr |
Using of the Modern Semiconductor Devices Based on the SiC |
title_full_unstemmed |
Using of the Modern Semiconductor Devices Based on the SiC |
title_sort |
using of the modern semiconductor devices based on the sic |
publisher |
VSB-Technical University of Ostrava |
series |
Advances in Electrical and Electronic Engineering |
issn |
1336-1376 1804-3119 |
publishDate |
2008-01-01 |
description |
This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide) inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors). |
topic |
semiconductor devices sic mosfet. |
url |
http://advances.utc.sk/index.php/AEEE/article/view/68 |
work_keys_str_mv |
AT paveldrabek usingofthemodernsemiconductordevicesbasedonthesic |
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1716828243991986176 |