Optical properties of GaAs/Al_xGa_{1-x}As/GaAs quantum dot with off-central impurity driven by electric field

Optical properties of GaAs/Al_xGa_{1-x}As/GaAs quantum dot with off-central impurity driven by electric field

The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in double-well spherical quantum dot GaAs/Al_xGa_{1-x}As/GaAs is researched. The problem is solved in the framework of the effective mass approximation and re...

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Bibliographic Details
Main Authors: V.A. Holovatsky, M.Ya. Yakhnevych, O.M. Voitsekhivska
Format: Article
Language:English
Published: Institute for Condensed Matter Physics 2018-03-01
Series:Condensed Matter Physics
Subjects:
multishell quantum dot
impurity
intraband transitions
Online Access:https://doi.org/10.5488/CMP.21.13703

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