Formation of Si or Ge nanodots in Si3N4 with in-situ donor modulation doping of adjacent barrier material

Formation of Si or Ge nanodots in Si3N4 with in-situ donor modulation doping of adjacent barrier material

Conventional doping of small nanodots does not provide majority carriers due to self-purification effects and much increased ionisation energies of dopants presenting point defects. Adjacent barrier layers to Si-rich Si3N4 can be doped by excess Si in-situ with the segregation anneal for Si nanodot...

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Main Authors: D. König, J. Rudd
Format: Article
Language:English
Published: AIP Publishing LLC 2013-01-01
Series:AIP Advances
Online Access:http://link.aip.org/link/doi/10.1063/1.4789397
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spelling doaj-1c56f4861b134a47ac35e0206fa3ba632020-11-25T00:22:20ZengAIP Publishing LLCAIP Advances2158-32262013-01-013101210901210910.1063/1.4789397Formation of Si or Ge nanodots in Si3N4 with in-situ donor modulation doping of adjacent barrier materialD. KönigJ. RuddConventional doping of small nanodots does not provide majority carriers due to self-purification effects and much increased ionisation energies of dopants presenting point defects. Adjacent barrier layers to Si-rich Si3N4 can be doped by excess Si in-situ with the segregation anneal for Si nanodot formation. Donor doping of AlxGa1−xN (0 ⩽ x ⩽ 1) with Si is an established process. Material properties and process compatibility of AlxGa1−xN render it suitable as barrier for Si nanodot superlattices. Ab-initio calculations showed that Ge also works as a donor in AlN, extending the material range to Ge and SiGe nanodots in Si3N4. http://link.aip.org/link/doi/10.1063/1.4789397
collection DOAJ
language English
format Article
sources DOAJ
author D. König
J. Rudd
spellingShingle D. König
J. Rudd
Formation of Si or Ge nanodots in Si3N4 with in-situ donor modulation doping of adjacent barrier material
AIP Advances
author_facet D. König
J. Rudd
author_sort D. König
title Formation of Si or Ge nanodots in Si3N4 with in-situ donor modulation doping of adjacent barrier material
title_short Formation of Si or Ge nanodots in Si3N4 with in-situ donor modulation doping of adjacent barrier material
title_full Formation of Si or Ge nanodots in Si3N4 with in-situ donor modulation doping of adjacent barrier material
title_fullStr Formation of Si or Ge nanodots in Si3N4 with in-situ donor modulation doping of adjacent barrier material
title_full_unstemmed Formation of Si or Ge nanodots in Si3N4 with in-situ donor modulation doping of adjacent barrier material
title_sort formation of si or ge nanodots in si3n4 with in-situ donor modulation doping of adjacent barrier material
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2013-01-01
description Conventional doping of small nanodots does not provide majority carriers due to self-purification effects and much increased ionisation energies of dopants presenting point defects. Adjacent barrier layers to Si-rich Si3N4 can be doped by excess Si in-situ with the segregation anneal for Si nanodot formation. Donor doping of AlxGa1−xN (0 ⩽ x ⩽ 1) with Si is an established process. Material properties and process compatibility of AlxGa1−xN render it suitable as barrier for Si nanodot superlattices. Ab-initio calculations showed that Ge also works as a donor in AlN, extending the material range to Ge and SiGe nanodots in Si3N4.
url http://link.aip.org/link/doi/10.1063/1.4789397
work_keys_str_mv AT dkonig formationofsiorgenanodotsinsi3n4withinsitudonormodulationdopingofadjacentbarriermaterial
AT jrudd formationofsiorgenanodotsinsi3n4withinsitudonormodulationdopingofadjacentbarriermaterial
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