THE RAMAN SPECTROSCOPY USE FOR MONITORING OF CHANGES IN THE GLASS STRUCTURE OF THE THIN LAYERS CAUSED BY ION IMPLANTATION

In this paper, we have demonstrated the utility of Raman spectroscopy as a technique for the characterisation of changes in the glass structure of the thin layers caused by ion implantation. Various types of silicate glasses were implanted by Au+ ions with energy of 1.7 MeV and a fluence of 1 x 1016...

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Bibliographic Details
Main Authors: Pavla Nekvindova, Stanek S., Vytykacova S., Mackova A., Malinsky P., Machovic V., Spirkova J.
Format: Article
Language:English
Published: University of Chemistry and Technology, Prague 2015-09-01
Series:Ceramics-Silikáty
Subjects:
Online Access: http://www.ceramics-silikaty.cz/2015/pdf/2015_03_187.pdf