Research of the tolerable pulsed power of silicon p+–p–n+-structure
The conducted researches of the thermal parameters of the silicon p+–p–n+-structure under the influence of the pulse signal have shown that the structure thermal resistance decreases in proportion to the decrease in the thickness of the base region and the dependence of the superheating temperature...
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Politehperiodika
2011-12-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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| Online Access: | http://www.tkea.com.ua/tkea/2011/6_2011/pdf/11.zip |
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doaj-1bb6519821d24c1d9f61c2e891dadf462020-11-24T22:47:56ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182011-12-0164345Research of the tolerable pulsed power of silicon p+–p–n+-structureKarimov A. V.Yodgorova D. M.Abdulhaev O. A.Karimov A. A.Asanova G. O.The conducted researches of the thermal parameters of the silicon p+–p–n+-structure under the influence of the pulse signal have shown that the structure thermal resistance decreases in proportion to the decrease in the thickness of the base region and the dependence of the superheating temperature of the pulsed power is close to exponential, which increases the withstanding capacity. A decrease in the thickness of the base region from 500 to 250 microns for a given temperature overheating can improve power handling diode p+–p–n+-structure by 30%.http://www.tkea.com.ua/tkea/2011/6_2011/pdf/11.zippulse powertransition temperaturethermal resistancebase thickness and temperature |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Karimov A. V. Yodgorova D. M. Abdulhaev O. A. Karimov A. A. Asanova G. O. |
| spellingShingle |
Karimov A. V. Yodgorova D. M. Abdulhaev O. A. Karimov A. A. Asanova G. O. Research of the tolerable pulsed power of silicon p+–p–n+-structure Tekhnologiya i Konstruirovanie v Elektronnoi Apparature pulse power transition temperature thermal resistance base thickness and temperature |
| author_facet |
Karimov A. V. Yodgorova D. M. Abdulhaev O. A. Karimov A. A. Asanova G. O. |
| author_sort |
Karimov A. V. |
| title |
Research of the tolerable pulsed power of silicon p+–p–n+-structure |
| title_short |
Research of the tolerable pulsed power of silicon p+–p–n+-structure |
| title_full |
Research of the tolerable pulsed power of silicon p+–p–n+-structure |
| title_fullStr |
Research of the tolerable pulsed power of silicon p+–p–n+-structure |
| title_full_unstemmed |
Research of the tolerable pulsed power of silicon p+–p–n+-structure |
| title_sort |
research of the tolerable pulsed power of silicon p+–p–n+-structure |
| publisher |
Politehperiodika |
| series |
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| issn |
2225-5818 |
| publishDate |
2011-12-01 |
| description |
The conducted researches of the thermal parameters of the silicon p+–p–n+-structure under the influence of the pulse signal have shown that the structure thermal resistance decreases in proportion to the decrease in the thickness of the base region and the dependence of the superheating temperature of the pulsed power is close to exponential, which increases the withstanding capacity. A decrease in the thickness of the base region from 500 to 250 microns for a given temperature overheating can improve power handling diode p+–p–n+-structure by 30%. |
| topic |
pulse power transition temperature thermal resistance base thickness and temperature |
| url |
http://www.tkea.com.ua/tkea/2011/6_2011/pdf/11.zip |
| work_keys_str_mv |
AT karimovav researchofthetolerablepulsedpowerofsiliconppnstructure AT yodgorovadm researchofthetolerablepulsedpowerofsiliconppnstructure AT abdulhaevoa researchofthetolerablepulsedpowerofsiliconppnstructure AT karimovaa researchofthetolerablepulsedpowerofsiliconppnstructure AT asanovago researchofthetolerablepulsedpowerofsiliconppnstructure |
| _version_ |
1725680444906668032 |