Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices

Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices

Abstract We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temper...

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Bibliographic Details
Main Authors: D. J. J. Loy, P. A. Dananjaya, X. L. Hong, D. P. Shum, W. S. Lew
Format: Article
Language:English
Published: Nature Publishing Group 2018-10-01
Series:Scientific Reports
Subjects:
Conduction Mechanism
Schottky Emission (SE)
High Resistance State (HRS)
Resistive Random Access Memory (RRAM)
RRAM Devices
Online Access:https://doi.org/10.1038/s41598-018-33198-0

Internet

https://doi.org/10.1038/s41598-018-33198-0

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