Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica
Disorder in semiconductors may lead to quantum interference and positive magnetoconductivity, whose maximum value in 3D is independent of material properties. Here, an apparent violation of this upper bound, in Sn-doped In2O3 films on fused silica, is explained by a model that accounts for additiona...
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Nature Publishing Group
2021-03-01
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Series: | Communications Materials |
Online Access: | https://doi.org/10.1038/s43246-021-00137-y |
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doaj-1b6f793a9520426cb12019a23dc7852f2021-03-28T11:17:40ZengNature Publishing GroupCommunications Materials2662-44432021-03-01211710.1038/s43246-021-00137-yQuantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silicaDavid C. Look0Kevin D. Leedy1Marco D. Santia2Stefan C. Badescu3Semiconductor Research Center, Wright State UniversityAir Force Research Laboratory Sensors Directorate, 2241 Avionics CircleAir Force Research Laboratory Sensors Directorate, 2241 Avionics CircleAir Force Research Laboratory Sensors Directorate, 2241 Avionics CircleDisorder in semiconductors may lead to quantum interference and positive magnetoconductivity, whose maximum value in 3D is independent of material properties. Here, an apparent violation of this upper bound, in Sn-doped In2O3 films on fused silica, is explained by a model that accounts for additional disorder close to the interface.https://doi.org/10.1038/s43246-021-00137-y |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
David C. Look Kevin D. Leedy Marco D. Santia Stefan C. Badescu |
spellingShingle |
David C. Look Kevin D. Leedy Marco D. Santia Stefan C. Badescu Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica Communications Materials |
author_facet |
David C. Look Kevin D. Leedy Marco D. Santia Stefan C. Badescu |
author_sort |
David C. Look |
title |
Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica |
title_short |
Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica |
title_full |
Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica |
title_fullStr |
Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica |
title_full_unstemmed |
Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica |
title_sort |
quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica |
publisher |
Nature Publishing Group |
series |
Communications Materials |
issn |
2662-4443 |
publishDate |
2021-03-01 |
description |
Disorder in semiconductors may lead to quantum interference and positive magnetoconductivity, whose maximum value in 3D is independent of material properties. Here, an apparent violation of this upper bound, in Sn-doped In2O3 films on fused silica, is explained by a model that accounts for additional disorder close to the interface. |
url |
https://doi.org/10.1038/s43246-021-00137-y |
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