Electrochemical Performance of Photovoltaic Cells Using HDA Capped-SnS Nanocrystal from bis (<i>N</i>-1,4-Phenyl-<i>N</i>-Morpho-Dithiocarbamato) Sn(II) Complexes
Great consideration is placed on the choice of capping agents’ base on the proposed application, in order to cater to the particular surface, size, geometry, and functional group. Change in any of the above can influence the characteristics properties of the nanomaterials. The adoption of...
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doaj-1b68f67b1c4049178e0c8c2e6303b89e2020-11-25T01:55:18ZengMDPI AGNanomaterials2079-49912020-02-0110341410.3390/nano10030414nano10030414Electrochemical Performance of Photovoltaic Cells Using HDA Capped-SnS Nanocrystal from bis (<i>N</i>-1,4-Phenyl-<i>N</i>-Morpho-Dithiocarbamato) Sn(II) ComplexesJohannes Z. Mbese0Edson L. Meyer1Mojeed A. Agoro2Department of Chemistry, University of Fort Hare, Private Bag X1314, Alice 5700, South AfricaFort Hare Institute of Technology, University of Fort Hare, Private Bag X1314, Alice 5700, South AfricaDepartment of Chemistry, University of Fort Hare, Private Bag X1314, Alice 5700, South AfricaGreat consideration is placed on the choice of capping agents’ base on the proposed application, in order to cater to the particular surface, size, geometry, and functional group. Change in any of the above can influence the characteristics properties of the nanomaterials. The adoption of hexadecylamine (HDA) as a capping agent in single source precursor approach offers better quantum dots (QDs) sensitizer materials with good quantum efficiency photoluminescence and desirable particles size. Structural, morphological, and electrochemical instruments were used to evaluate the characterization and efficiency of the sensitizers. The cyclic voltammetry (CV) results display both reduction and oxidation peaks for both materials. XRD for SnS/HDA and SnS photosensitizers displays eleven peaks within the values of 27.02° to 66.05° for SnS/HDA and 26.03° to 66.04° for SnS in correlation to the orthorhombic structure. Current density−voltage (I−V) results for SnS/HDA exhibited a better performance compared to SnS sensitizers. Bode plot results indicate electrons lifetime (τ) for SnS/HDA photosensitizer have superiority to the SnS photosensitizer. The results connote that SnS/HDA exhibited a better performance compared to SnS sensitizers due to the presence of HDA capping agent.https://www.mdpi.com/2079-4991/10/3/414single-source precursorquantum dotssemiconductorselectrochemicalphotovoltaic cells |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Johannes Z. Mbese Edson L. Meyer Mojeed A. Agoro |
spellingShingle |
Johannes Z. Mbese Edson L. Meyer Mojeed A. Agoro Electrochemical Performance of Photovoltaic Cells Using HDA Capped-SnS Nanocrystal from bis (<i>N</i>-1,4-Phenyl-<i>N</i>-Morpho-Dithiocarbamato) Sn(II) Complexes Nanomaterials single-source precursor quantum dots semiconductors electrochemical photovoltaic cells |
author_facet |
Johannes Z. Mbese Edson L. Meyer Mojeed A. Agoro |
author_sort |
Johannes Z. Mbese |
title |
Electrochemical Performance of Photovoltaic Cells Using HDA Capped-SnS Nanocrystal from bis (<i>N</i>-1,4-Phenyl-<i>N</i>-Morpho-Dithiocarbamato) Sn(II) Complexes |
title_short |
Electrochemical Performance of Photovoltaic Cells Using HDA Capped-SnS Nanocrystal from bis (<i>N</i>-1,4-Phenyl-<i>N</i>-Morpho-Dithiocarbamato) Sn(II) Complexes |
title_full |
Electrochemical Performance of Photovoltaic Cells Using HDA Capped-SnS Nanocrystal from bis (<i>N</i>-1,4-Phenyl-<i>N</i>-Morpho-Dithiocarbamato) Sn(II) Complexes |
title_fullStr |
Electrochemical Performance of Photovoltaic Cells Using HDA Capped-SnS Nanocrystal from bis (<i>N</i>-1,4-Phenyl-<i>N</i>-Morpho-Dithiocarbamato) Sn(II) Complexes |
title_full_unstemmed |
Electrochemical Performance of Photovoltaic Cells Using HDA Capped-SnS Nanocrystal from bis (<i>N</i>-1,4-Phenyl-<i>N</i>-Morpho-Dithiocarbamato) Sn(II) Complexes |
title_sort |
electrochemical performance of photovoltaic cells using hda capped-sns nanocrystal from bis (<i>n</i>-1,4-phenyl-<i>n</i>-morpho-dithiocarbamato) sn(ii) complexes |
publisher |
MDPI AG |
series |
Nanomaterials |
issn |
2079-4991 |
publishDate |
2020-02-01 |
description |
Great consideration is placed on the choice of capping agents’ base on the proposed application, in order to cater to the particular surface, size, geometry, and functional group. Change in any of the above can influence the characteristics properties of the nanomaterials. The adoption of hexadecylamine (HDA) as a capping agent in single source precursor approach offers better quantum dots (QDs) sensitizer materials with good quantum efficiency photoluminescence and desirable particles size. Structural, morphological, and electrochemical instruments were used to evaluate the characterization and efficiency of the sensitizers. The cyclic voltammetry (CV) results display both reduction and oxidation peaks for both materials. XRD for SnS/HDA and SnS photosensitizers displays eleven peaks within the values of 27.02° to 66.05° for SnS/HDA and 26.03° to 66.04° for SnS in correlation to the orthorhombic structure. Current density−voltage (I−V) results for SnS/HDA exhibited a better performance compared to SnS sensitizers. Bode plot results indicate electrons lifetime (τ) for SnS/HDA photosensitizer have superiority to the SnS photosensitizer. The results connote that SnS/HDA exhibited a better performance compared to SnS sensitizers due to the presence of HDA capping agent. |
topic |
single-source precursor quantum dots semiconductors electrochemical photovoltaic cells |
url |
https://www.mdpi.com/2079-4991/10/3/414 |
work_keys_str_mv |
AT johanneszmbese electrochemicalperformanceofphotovoltaiccellsusinghdacappedsnsnanocrystalfrombisini14phenylinimorphodithiocarbamatosniicomplexes AT edsonlmeyer electrochemicalperformanceofphotovoltaiccellsusinghdacappedsnsnanocrystalfrombisini14phenylinimorphodithiocarbamatosniicomplexes AT mojeedaagoro electrochemicalperformanceofphotovoltaiccellsusinghdacappedsnsnanocrystalfrombisini14phenylinimorphodithiocarbamatosniicomplexes |
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