Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming sidewall damages in perpendicular magnetized magnetic tunnel junctions
The influence of magnetic damages at the sidewall of perpendicular magnetic tunnel junctions (p-MTJs), which are the core devices of spin-transfer-torque magnetoresistive random-access memory (STT-MRAM), is discussed based on the thermal stability factor, Δ, double-logarithmic plot of normalized swi...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0007499 |