TSV Technology and High-Energy Heavy Ions Radiation Impact Review

• Main Authors: Wenchao Tian, Tianran Ma, Xiaohan Liu
• Format: Article
• Language: English
• Published: MDPI AG 2018-07-01
• Series: Electronics
• Subjects: high-energy heavy ions; silicon interposer; TSV
• Online Access: http://www.mdpi.com/2079-9292/7/7/112

Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.