BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors
Three-independent-gate field-effect transistors (TIGFETs) are a promising next-generation device technology. Their controllable-polarity capability allows for superior design of arithmetic and sequential logic gates. In this paper, the TIGFET technology has been benchmarked against several beyond-CM...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8334185/ |