Optically and thermally controlled terahertz metamaterial via transition between direct and indirect electromagnetically induced transparency

Optically and thermally controlled terahertz metamaterial via transition between direct and indirect electromagnetically induced transparency

This passage presents a design of tunable terahertz metamaterials via transition between indirect and direct electromagnetically induced transparency (EIT) effects by changing semiconductor InSb’s properties to terahertz wave under optical and thermal stimuli. Mechanical model and its e...

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Main Authors: Jiawei Sui, Ls Feng
Format: Article
Language:English
Published: AIP Publishing LLC 2014-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4904227
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spelling doaj-19683643cadc4459a68314346296e3c22020-11-25T01:12:30ZengAIP Publishing LLCAIP Advances2158-32262014-12-01412127122127122-610.1063/1.4904227026412ADVOptically and thermally controlled terahertz metamaterial via transition between direct and indirect electromagnetically induced transparencyJiawei Sui0Ls Feng1Department of Instrumental Science and Opto-electronics Engineering, Beihang University, Beijing 100191, ChinaDepartment of Instrumental Science and Opto-electronics Engineering, Beihang University, Beijing 100191, China This passage presents a design of tunable terahertz metamaterials via transition between indirect and direct electromagnetically induced transparency (EIT) effects by changing semiconductor InSb’s properties to terahertz wave under optical and thermal stimuli. Mechanical model and its electrical circuit model are utilized in analytically calculating maximum transmission of transparency window. Simulated results show consistency with the analytical expressions. The results show that the metamaterials hold 98.4% modulation depth at 189 GHz between 300 K, σInSb =256000 S/m, and 80 K, σInSb =0.0162 S/m conditions , 1360 ps recovery time of the excited electrons in InSb under optical stimulus at 300 K mainly considering the direct EIT effect, and minimum bandwidth 1 GHz. http://dx.doi.org/10.1063/1.4904227
collection DOAJ
language English
format Article
sources DOAJ
author Jiawei Sui
Ls Feng
spellingShingle Jiawei Sui
Ls Feng
Optically and thermally controlled terahertz metamaterial via transition between direct and indirect electromagnetically induced transparency
AIP Advances
author_facet Jiawei Sui
Ls Feng
author_sort Jiawei Sui
title Optically and thermally controlled terahertz metamaterial via transition between direct and indirect electromagnetically induced transparency
title_short Optically and thermally controlled terahertz metamaterial via transition between direct and indirect electromagnetically induced transparency
title_full Optically and thermally controlled terahertz metamaterial via transition between direct and indirect electromagnetically induced transparency
title_fullStr Optically and thermally controlled terahertz metamaterial via transition between direct and indirect electromagnetically induced transparency
title_full_unstemmed Optically and thermally controlled terahertz metamaterial via transition between direct and indirect electromagnetically induced transparency
title_sort optically and thermally controlled terahertz metamaterial via transition between direct and indirect electromagnetically induced transparency
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2014-12-01
description This passage presents a design of tunable terahertz metamaterials via transition between indirect and direct electromagnetically induced transparency (EIT) effects by changing semiconductor InSb’s properties to terahertz wave under optical and thermal stimuli. Mechanical model and its electrical circuit model are utilized in analytically calculating maximum transmission of transparency window. Simulated results show consistency with the analytical expressions. The results show that the metamaterials hold 98.4% modulation depth at 189 GHz between 300 K, σInSb =256000 S/m, and 80 K, σInSb =0.0162 S/m conditions , 1360 ps recovery time of the excited electrons in InSb under optical stimulus at 300 K mainly considering the direct EIT effect, and minimum bandwidth 1 GHz.
url http://dx.doi.org/10.1063/1.4904227
work_keys_str_mv AT jiaweisui opticallyandthermallycontrolledterahertzmetamaterialviatransitionbetweendirectandindirectelectromagneticallyinducedtransparency
AT lsfeng opticallyandthermallycontrolledterahertzmetamaterialviatransitionbetweendirectandindirectelectromagneticallyinducedtransparency
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