A 2 Bit/Cell Tilting SRAM-Based PUF With a BER of 3.1E-10 and an Energy of 21 FJ/Bit in 65nm
An SRAM-based Physical Unclonable Function (PUF) with two independent bits/cells is presented along with a tilting preselection test designed to identify all the unstable bits. Results of analysis of the Decision Voltage of the SRAM-based PUF cell indicate that in certain conditions, only the NMOS t...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Open Journal of Circuits and Systems |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9246212/ |