Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques

Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques

Thiswork presents results of comparative studies of the optical absorption coefficient spectra of ion implanted layers in silicon. Three nondestructive and noncontact techniques were used for this purpose: spectroscopic ellipsometry (SE), modulated free carriers absorption (MFCA) and the photo therm...

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Bibliographic Details
Main Authors: Krzysztof Dorywalski, Łukasz Chrobak, Mirosław Maliński
Format: Article
Language:English
Published: Polish Academy of Sciences 2020-06-01
Series:Metrology and Measurement Systems
Subjects:
silicon
ion implantation
optical absorption coefficient spectra
modulated free carrier absorption
photo thermal radiometry
ellipsometry
nondestructive techniques
Online Access:http://journals.pan.pl/dlibra/publication/132778/edition/116016/content

Internet

http://journals.pan.pl/dlibra/publication/132778/edition/116016/content

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