Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques
Thiswork presents results of comparative studies of the optical absorption coefficient spectra of ion implanted layers in silicon. Three nondestructive and noncontact techniques were used for this purpose: spectroscopic ellipsometry (SE), modulated free carriers absorption (MFCA) and the photo therm...
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Polish Academy of Sciences
2020-06-01
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| Series: | Metrology and Measurement Systems |
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| Online Access: | http://journals.pan.pl/dlibra/publication/132778/edition/116016/content |
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doaj-1894e4f5167945f2a3b4d858e5e0e4052020-11-25T03:06:09ZengPolish Academy of SciencesMetrology and Measurement Systems2300-19412020-06-0127232333710.24425/mms.2020.132778Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques Krzysztof Dorywalski0Łukasz Chrobak1Mirosław Maliński2Koszalin University of Technology, Faculty of Mechanical Engineering, Department of Mechatronics and Automation, Śniadeckich 2, 75-453 Koszalin, PolandKoszalin University of Technology, Faculty of Electronics and Computer Sciences, Śniadeckich 2, 75-453 Koszalin, PolandKoszalin University of Technology, Faculty of Electronics and Computer Sciences, Śniadeckich 2, 75-453 Koszalin, PolandThiswork presents results of comparative studies of the optical absorption coefficient spectra of ion implanted layers in silicon. Three nondestructive and noncontact techniques were used for this purpose: spectroscopic ellipsometry (SE), modulated free carriers absorption (MFCA) and the photo thermal radiometry (PTR). Results obtained with the ellipsometric method are the proof of correctness of the results obtained with the MFCAandPTRtechniques. These techniques are usually used for investigations of recombination parameters of semiconductors. They are not used for investigations of the optical parameters of semiconductors. Optical absorption coefficient spectra of Fe+ and Ge+ high energy and dose implanted layers in silicon, obtained with the three techniques, are presented and compared. http://journals.pan.pl/dlibra/publication/132778/edition/116016/contentsiliconion implantationoptical absorption coefficient spectramodulated free carrier absorptionphoto thermal radiometryellipsometrynondestructive techniques |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Krzysztof Dorywalski Łukasz Chrobak Mirosław Maliński |
| spellingShingle |
Krzysztof Dorywalski Łukasz Chrobak Mirosław Maliński Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques Metrology and Measurement Systems silicon ion implantation optical absorption coefficient spectra modulated free carrier absorption photo thermal radiometry ellipsometry nondestructive techniques |
| author_facet |
Krzysztof Dorywalski Łukasz Chrobak Mirosław Maliński |
| author_sort |
Krzysztof Dorywalski |
| title |
Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques |
| title_short |
Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques |
| title_full |
Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques |
| title_fullStr |
Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques |
| title_full_unstemmed |
Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques |
| title_sort |
comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques |
| publisher |
Polish Academy of Sciences |
| series |
Metrology and Measurement Systems |
| issn |
2300-1941 |
| publishDate |
2020-06-01 |
| description |
Thiswork presents results of comparative studies of the optical absorption coefficient spectra of ion implanted layers in silicon. Three nondestructive and noncontact techniques were used for this purpose: spectroscopic ellipsometry (SE), modulated free carriers absorption (MFCA) and the photo thermal radiometry (PTR). Results obtained with the ellipsometric method are the proof of correctness of the results obtained with the MFCAandPTRtechniques. These techniques are usually used for investigations of recombination parameters of semiconductors. They are not used for investigations of the optical parameters of semiconductors. Optical absorption coefficient spectra of Fe+ and Ge+ high energy and dose implanted layers in silicon, obtained with the three techniques, are presented and compared. |
| topic |
silicon ion implantation optical absorption coefficient spectra modulated free carrier absorption photo thermal radiometry ellipsometry nondestructive techniques |
| url |
http://journals.pan.pl/dlibra/publication/132778/edition/116016/content |
| work_keys_str_mv |
AT krzysztofdorywalski comparativestudiesoftheopticalabsorptioncoefficientspectraintheimplantedlayersinsiliconwiththeuseofnondestructivespectroscopictechniques AT łukaszchrobak comparativestudiesoftheopticalabsorptioncoefficientspectraintheimplantedlayersinsiliconwiththeuseofnondestructivespectroscopictechniques AT mirosławmalinski comparativestudiesoftheopticalabsorptioncoefficientspectraintheimplantedlayersinsiliconwiththeuseofnondestructivespectroscopictechniques |
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